onsemi Transistor 30 A NPN Bipolar 450 V TO-247 3-Pin Through Hole MJW18020G

onsemi MJW18020G Transistor is a robust bipolar NPN power transistor designed for demanding industrial, electronic, and power control applications. It features a high collector current rating of 30 A and a collector-emitter voltage of 450 V, enabling it to handle substantial power loads effectively.

The device is housed in a TO-247 package with three pins, suitable for through-hole mounting which allows easy integration into printed circuit boards. It supports maximum power dissipation of 250 W, helping maintain functionality under high thermal conditions.

This transistor’s operating temperature range spans from -65°C up to 150°C, making it ideal for use in harsh environments. Its minimum DC current gain of 14 and maximum transition frequency of 1 MHz make it well suited for switching and amplification applications in mid-frequency circuits.

Physical dimensions are compact with a length of 16.26 mm, height of 41.85 mm, and width of 5.3 mm, ensuring flexible configurations in device assemblies. The device also specifies maximum voltages of 1000 V dc collector-base and 9 V emitter-base, which enhances its voltage handling capabilities.

Typical applications include industrial power supplies, motor drives, power amplifiers, and electronic control systems. Built for reliability and performance, the MJW18020G transistor is a core component for power management in electronic and industrial equipment.

Maximum DC collector current of 30 A ensures robust power handling capacity. Collector-emitter voltage rating of 450 V suitable for high-voltage circuits. Package type TO-247 with 3 pins facilitates through-hole mounting.

Maximum power dissipation of 250 W supports heat-intensive operations. Designed with NPN transistor polarity for common switching and amplification tasks. Operating temperature range from -65°C to 150°C for varying environmental conditions.

Minimum DC current gain hFE of 14 guarantees reliable gain performance. Maximum transition frequency of 1 MHz suits medium-frequency applications. Compact physical dimensions with length 16.26 mm, height 41.85 mm, and width 5.3 mm.

Maximum collector-base voltage at 1000 V dc and emitter-base at 9 V enhances operational stability. Explore more semiconductor products like Bipolar Transistors at EnvMart for all your industrial and electronic component needs.