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Nexperia N-Channel MOSFET 320 mA 60 V Enhancement 3-Pin SC-70 BSS138PW,115

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Nexperia N-Channel MOSFET 320 mA 60 V Enhancement 3-Pin SC-70 BSS138PW,115

Name: Nexperia N-Channel MOSFET 320 mA 60 V Enhancement 3-Pin SC-70 BSS138PW,115
Brand: Nexperia
SKU: 131805
Price: 0.05 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	Malaysia
Brand	Nexperia
Height	1mm
Length	2.2mm
Model	BSS138PW,115
Width	1.35mm
Mount Type	Surface
Series	BSS138PW
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	320mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	1.6Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	310mW
Typical Gate Charge Qg @ Vgs	0.72nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.1V
N-Channel MOSFET, 340 mA, 60 V, 3-Pin SOT-323 onsemi 2V7002WT1GBrand	onsemi

Key Features

Features a compact 3-pin SC-70 surface-mount package for efficient PCB integration.
Maximum drain-source resistance (Rds) of 1.6 ohms reduces power loss during conduction.
Supports continuous power dissipation up to 310 mW for reliable performance.
Wide operating temperature range from -55°C to 150°C ensures suitability for harsh environments.
Gate charge of 0.72 nC at Vgs enables fast switching behavior.
Maximum gate-source voltage of ±20 V protects against gate overvoltage.
Forward voltage drop of 1.1 V enhances efficiency in switching applications.
Meets automotive standard AEC-Q101 for high reliability automotive use.

Product Description

Nexperia BSS138PW,115 N-Channel MOSFET is a surface-mount discrete semiconductor designed for low-level switching applications requiring reliable operation up to 60 V and 320 mA continuous drain current.

This transistor features an enhancement mode channel with a low maximum drain-source resistance of 1.6 ohms, reducing conduction losses and improving efficiency in power-sensitive circuits. Its compact SC-70 package allows for dense PCB layouts, measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The device supports continuous power dissipation of 310 mW and operates reliably in extreme temperature conditions from -55°C to 150°C, making it suitable for automotive and industrial environments. The gate charge of 0.72 nC at gate-source voltage (Vgs) enables fast switching speeds while a maximum gate-source voltage tolerance of ±20 V protects the gate from overvoltage stress.

Its forward voltage of 1.1 V supports efficient control in DC and switching circuits. The device complies with the AEC-Q101 automotive standard, underlining its robustness for automotive applications.

Typical applications include switching loads, driver circuits, and interface devices in electronic modules across industrial, automotive, and consumer electronics sectors. Compact 3-pin SC-70 surface-mount package suitable for high-density PCB assemblies.

320 mA continuous drain current rating with 60 V drain-source voltage capability. Enhanced reliability in automotive systems with AEC-Q101 certification. Wide temperature operating range supporting harsh environment performance.

Optimised low gate charge for efficient switching operation. Low Rds(on) reduces conduction losses and thermal dissipation requirements. Robust device built for industrial, automotive, and commercial electronic applications.

Choose from a trusted range of Nexperia discrete semiconductors for quality and consistency. Discover more MOSFETs and related semiconductor components in the Electronics & Electricals > Semiconductor > MOSFET category on EnvMart for your next design or manufacturing project.