STMicroelectronics N-Channel STripFET V MOSFET, 2.3 A Continuous Drain Current, 20 V Drain Source Voltage, 3-Pin STR2N2VH5

The STMicroelectronics STR2N2VH5 is an N-Channel STripFET™ V type MOSFET designed for efficient power switching and amplification applications. It offers a maximum continuous drain current of 2.3 amperes and a maximum drain-source voltage of 20 volts, suitable for moderate power electronic circuits.

This device is housed in a compact 3-pin SOT-23 surface-mount package that facilitates integration into modern electronic designs with limited PCB space. The transistor features an enhancement mode channel with a low on-resistance of 40 milliohms, minimizing conduction losses and improving overall efficiency.

The typical gate charge of 6 nanocoulombs allows fast switching capabilities, making this MOSFET effective in high-frequency circuits. It supports a maximum power dissipation of 350 milliwatts and operates reliably in a wide temperature range from -55°C to 150°C, ensuring durability in industrial, automotive, and consumer electronics environments.

Additional technical details include a forward voltage drop of 1.1 volts and a maximum gate-source voltage rating of ±8 volts. The physical size is compact with dimensions of 3.04 mm length, 1.75 mm width, and 1.3 mm height, offering design flexibility.

Applications for the STR2N2VH5 include power management, switching regulators, and load drivers in industrial automation, telecommunications, and consumer electronics. This MOSFET is a reliable semiconductor component suitable for various electronic systems requiring efficient and robust transistor performance.

Maximum continuous drain current of 2.3 amperes for reliable operation. Maximum drain-source voltage rating of 20 volts for moderate voltage applications. Surface-mount SOT-23 package with 3 pins for easy PCB integration.

Low on-resistance of 40 milliohms for efficient power handling. Enhancement mode N-channel MOSFET suitable for switching and amplification. Typical gate charge of 6 nanocoulombs ensures fast switching performance. Maximum power dissipation of 350 milliwatts supports moderate thermal loads.

Operating temperature range from -55°C to 150°C for robust environmental tolerance. Forward voltage drop of 1.1 volts enhances conduction efficiency. Compact dimensions: length 3.04 mm, width 1.75 mm, height 1.3 mm for space-limited designs.

Explore the semiconductor section on EnvMart for more MOSFET components and STMicroelectronics products suitable for your application needs.

Explore more products in our MOSFETs category.