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onsemi Silicon Junction Switching Diode Common Cathode 3-Pin SOT-23 400 mA 250 V BAV23CLT1G

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model BAV23CLT1G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Power Dissipation Pd 400mW
Diode Configuration Common Cathode
Peak Non-Repetitive Forward Surge Current Ifsm 9A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 150ns
Maximum Forward Current If 400mA
Maximum Peak Reverse Repetitive Voltage Vrrm 250V

Key Features

  • Rated for a maximum forward current of 400 mA.
  • Common cathode diode configuration suitable for switching applications.
  • Surface mount package type SOT-23 with 3 pins ensuring compact design.
  • Maximum forward voltage drop is 1.25 V for efficient conduction.
  • Operating temperature range is from -55°C to 150°C for robust performance.
  • Capable of handling peak non-repetitive forward surge current of 9 A.
  • Maximum power dissipation rated at 400 mW to manage thermal stress.
  • Fast switching with peak reverse recovery time of 150 ns.

Product Description

onsemi BAV23CLT1G is a small signal silicon junction switching diode with a common cathode configuration and three pins housed in a compact SOT-23 surface mount package. It is designed for efficient switching and signal processing in electronic circuits.

This diode supports a maximum forward current of 400 mA and can handle peak reverse voltage up to 250 V. It features a low forward voltage drop of 1.25 V, enabling lower power losses during operation. Its robust temperature range from -55°C to 150°C allows reliable usage in a variety of industrial and consumer electronic environments.

The device also withstands peak non-repetitive forward surge current of 9 A and has a power dissipation rating of 400 mW, ensuring durability under transient and continuous electrical stresses. Its fast peak reverse recovery time of 150 ns facilitates high-speed switching applications.

With precise dimensions of 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, this diode fits well in compact circuit designs requiring surface mount technology. While it is not certified under automotive standards, it finds extensive use in electronics manufacturing, telecommunications, power management, and other sectors.

Rated maximum forward current: 400 mA. Common cathode switching diode configuration. Surface mount SOT-23 package, 3 pins. Maximum forward voltage drop: 1.25 V. Operating temperature range: -55°C to 150°C. Peak non-repetitive forward surge current: 9 A.

Power dissipation: 400 mW. Peak reverse recovery time: 150 ns. Compact dimensions for easy PCB integration. No automotive standards compliance.

This product is suitable for industrial, laboratory, electronics manufacturing, telecommunications, and power electronics applications where small signal Switching Diodes are required. EnvMart offers this onsemi diode as part of its comprehensive semiconductor and electronic components catalog for professional engineers and industrial buyers.

onsemi Silicon Junction Switching Diode Common Cathode 3-Pin SOT-23 400 mA 250 V BAV23CLT1G
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Frequently Asked Questions

The maximum forward current of this diode is rated at 400 mA.

It can handle a peak reverse voltage of up to 250 V.

The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.

The operating temperature range is from -55°C to 150°C.

The maximum power dissipation is rated at 400 mW.

It features a common cathode diode configuration.

It can withstand a peak non-repetitive forward surge current of 9 A.

The maximum forward voltage drop is 1.25 V.

The peak reverse recovery time is 150 ns.

This diode is designed for surface mount applications.

It is suitable for industrial, laboratory, electronics manufacturing, telecommunications, and power electronics applications.

The country of origin for the BAV23CLT1G is India.

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