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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 27.5mm |
| Length | 7.8mm |
| Model | BD135 |
| Width | 2.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-32 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 45V |
| Maximum Power Dissipation Pd | 1.25W |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Single |
STMicroelectronics BD135 transistor is a high-quality general purpose NPN bipolar transistor designed for switching and amplification within electronic circuits. It features a maximum DC collector current of 3 amperes and can withstand collector-emitter voltages up to 45 volts, making it suitable for moderate power electronic applications.
Packaged in a 3-pin SOT-32 through-hole casing, this transistor ensures robust mechanical and electrical connectivity in circuit boards. Its single transistor configuration makes it versatile for various designs requiring NPN transistors.
Thermal considerations are addressed with a maximum power dissipation of 1.25 watts, supporting efficient heat management in demanding electrical environments. The transistor exhibits a minimum current gain (hFE) of 25, delivering dependable signal amplification in switching and control applications.
Operating within a temperature range of 0 to 150 degrees Celsius, the BD135 transistor can sustain performance in various industrial and laboratory conditions. Its compact dimensions - height of 27.5 mm, length of 7.8 mm, and width of 2.9 mm - facilitate easy integration into compact electronic assemblies.
The maximum emitter-base voltage is specified at 5 volts, while the maximum collector-base voltage is 45 volts, meeting the requirements for stable transistor operation under typical circuit stress conditions. This transistor is not designed to meet automotive standards but is ideal for industrial, laboratory, and general-purpose electronics manufacturing.
Designed for general purpose switching and amplification applications. Supports maximum collector current of 3 amperes. Maximum collector-emitter voltage rating of 45 volts ensures wide voltage tolerance. Low power dissipation up to 1.25 watts for efficient thermal performance.
Single transistor configuration with 3 pins for through-hole mounting. Minimum DC current gain (hFE) of 25 guarantees reliable amplification. Operates over a temperature range from 0°C to 150°C. Compact physical dimensions with height 27.5 mm, length 7.8 mm, and width 2.9 mm.
Emitter-base voltage maximum of 5 V and collector-base voltage maximum of 45 V. Non-automotive standard component suitable for various industrial and electronic circuitry uses.
This transistor is well-suited for applications in industrial electronics, electronic circuit prototyping, manufacturing education, laboratory experimentation, and general electrical component replacement. Its high current capacity and moderately high voltage rating make it appropriate for power control circuits, amplifier stages, and switching regulators.
Explore our Electronics & Electricals semiconductor category for more Bipolar Transistors, including a variety of STMicroelectronics solutions to meet your design and manufacturing requirements.
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