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Nexperia N-Channel MOSFET, 67 A, 30 V Enhancement Mode, 5-Pin LFPAK PH8230E,115

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Nexperia N-Channel MOSFET, 67 A, 30 V Enhancement Mode, 5-Pin LFPAK PH8230E,115

Name: Nexperia N-Channel MOSFET, 67 A, 30 V Enhancement Mode, 5-Pin LFPAK PH8230E,115
Brand: Nexperia
SKU: 122707
Price: 1.34 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	Philippines
Brand	Nexperia
Height	1.1mm
Length	5mm
Model	PH8230E,115
Width	4.1mm
Mount Type	Surface
Series	PH8230E
Maximum Operating Temperature	150°C
Package Type	LFPAK
Minimum Operating Temperature	-55°C
Pin Count	5
Channel Type	N
Maximum Continuous Drain Current Id	67A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	8mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	62.5W
Typical Gate Charge Qg @ Vgs	14nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	850mV

Key Features

High current rating of 67 amperes for efficient power handling.
Maximum drain-source voltage of 30 volts ensuring stable operation.
Enhancement mode channel with N-type conduction.
Low drain-source resistance of 8 milliohms to minimize conduction losses.
Compact 5-pin LFPAK surface mount package with dimensions 5 mm x 4.1 mm x 1.1 mm.
Maximum power dissipation of 62.5 watts for robust thermal performance.
Operational temperature range from -55°C to 150°C for industrial applications.
Typical gate charge of 14 nanocoulombs at Vgs representing fast switching capabilities.

Product Description

The Nexperia PH8230E,115 is a high-performance N-Channel MOSFET transistor designed for demanding power and switching applications. It features a continuous drain current rating of 67 amps and a maximum drain-source voltage of 30 volts, as well as a low Rds(on) of 8 milliohms, minimizing conduction losses and improving energy efficiency.

Manufactured in a compact 5-pin LFPAK surface mount package measuring 5 mm in length, 4.1 mm in width, and 1.1 mm in height, this MOSFET is suited for space-constrained electronic circuits. The device operates reliably over a wide temperature range from -55°C to 150°C, enabling use in various industrial, automotive, and commercial electronics environments.

Featuring an enhancement mode N-type channel, the PH8230E,115 provides fast switching with a typical gate charge of 14 nanocoulombs at the standard gate voltage, and supports a gate voltage range from -20 to +20 volts. Its forward voltage drop of 850 millivolts ensures low power dissipation during conduction, suitable for high-efficiency power conversion systems.

This MOSFET meets general semiconductor standards, and is manufactured in the Philippines. It is commonly used in power management, industrial automation, consumer electronics, and embedded system applications where efficient high-current switching is required.

High continuous drain current of 67 A supports robust power applications. Low Rds(on) of 8 mΩ reduces conduction losses and enhances efficiency. Compact LFPAK 5-pin surface mount package fits tight PCB layouts. Wide operating temperature range enables use in harsh environments.

Fast switching with typical gate charge of 14 nC improves performance. Electrical reliability with maximum gate-source voltage of ±20 V. Maximum power dissipation of 62.5 W supports high load operation. Forward voltage of 850 mV suitable for low voltage drop circuits.

Manufactured origin: Philippines ensuring quality standards. Ideal for industrial, automotive, and consumer electronic applications. Explore a wide variety of MOSFET and semiconductor solutions on EnvMart for your electronic and electrical component needs.