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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 10 A 600 V Enhancement 3-Pin TO-247 STW10NK60Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW10NK60Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 750mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 156W |
| Typical Gate Charge Qg @ Vgs | 50nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET features a maximum continuous drain current of 10 amperes.
- Maximum drain-source voltage is rated at 600 volts, suitable for high voltage switching.
- Package type is TO-247 with 3 pins for through-hole mounting.
- Maximum drain-source resistance is 750 milliohms, ensuring efficient conduction.
- Operating temperature ranges from -55°C to 150°C for reliable thermal performance.
- Typical gate charge is 50 nanocoulombs at gate-source voltage.
- Channel mode is enhancement type for controlled switching.
- Forward voltage drop is 1.6 volts to minimize power loss during conduction.
Product Description
STMicroelectronics STW10NK60Z is a high-performance MDmesh SuperMESH N-Channel MOSFET designed for electronic switching and power management applications. It supports a maximum continuous drain current of 10 amperes and withstands up to 600 volts between drain and source terminals. The device utilizes an enhancement channel mode to provide efficient full switching.
Packaged in a 3-pin TO-247 through-hole form factor, it is suitable for industrial, automotive, and commercial electronic equipment requiring robust and reliable MOSFETs capable of operating in harsh temperature environments from -55°C to 150°C.
This MOSFET offers a maximum drain-source resistance (Rds) of 750 milliohms, aiding in reducing conduction losses and improving energy efficiency. The typical gate charge of 50 nanocoulombs enables fast switching speeds, beneficial for high-frequency power circuits.
Key electrical parameters include a forward voltage drop of 1.6 volts and a maximum power dissipation of 156 watts, which provides safety margin under heavy loads. The compact footprint with dimensions of 15.75 mm length, 5.15 mm width, and 20.15 mm height allows integration into tight circuit board layouts.
This MOSFET is engineered for use in industrial power supplies, motor drivers, and power conversion systems. Its robust design supports applications in automotive electronics where high voltage and current switching is critical.
The device’s wide operating temperature range makes it reliable in laboratory and manufacturing environments. The through-hole TO-247 package ensures ease of mounting and enhanced heat dissipation with proper heatsinking.
STMicroelectronics MDmesh SuperMESH series MOSFETs are recognized for durability and efficient performance in modern electronic components. Explore the extensive range of semiconductor devices at EnvMart to find components that meet your system design requirements effectively.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 10 amperes.
The maximum drain-source voltage rating is 600 volts, making it suitable for high voltage applications.
It is packaged in a TO-247 type, which features 3 pins for through-hole mounting.
The maximum power dissipation for this model is 156 watts.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 50 nanocoulombs at gate-source voltage.
The maximum drain-source resistance is rated at 750 milliohms, which helps in reducing conduction losses.
The forward voltage drop is 1.6 volts, which minimizes power loss during conduction.
This model utilizes an enhancement channel type for controlled switching.
The dimensions are 15.75 mm in length, 5.15 mm in width, and 20.15 mm in height.
It is suitable for industrial power supplies, motor drivers, and power conversion systems.
The maximum gate-source voltage is rated at -30V to +30V.
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