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Infineon STripFET N-Channel MOSFET, 6.5 A, 30 V Enhancement Mode, 4-Pin SOT-223 Package STN4NF03L
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.8mm |
| Length | 6.5mm |
| Model | STN4NF03L |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.3W |
| Typical Gate Charge Qg @ Vgs | 6.5nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.5V |
| N-Channel MOSFET, 5 A, 55 V, 3 + Tab-Pin SOT-223 Infineon IRLL024ZPBFBrand | Infineon |
Key Features
- Features enhancement mode for efficient switching performance.
- Packaged in a compact 4-pin SOT-223 surface mount package.
- Maximum power dissipation rated at 3.3 watts.
- Low maximum drain-source resistance of 50 milliohms ensuring low conduction losses.
- Capable of operating across a wide temperature range from -55°C to 150°C.
- Typical gate charge of 6.5 nanocoulombs at Vgs for fast switching.
- Forward voltage drop of approximately 1.5 volts enhances efficiency.
- Maximum gate-source voltage tolerance of -16 to +16 volts.
Product Description
STMicroelectronics STN4NF03L is a high performance N-Channel STripFET MOSFET designed for efficient power switching and amplification applications. Featuring a maximum continuous drain current of 6.5 A and a drain-source voltage rating of 30 V, this component is ideal for electronic circuits requiring medium power handling capacity.
This device operates in enhancement mode and is housed in a 4-pin SOT-223 surface mount package, facilitating compact PCB layouts in industrial, commercial, and automotive electronics.
The MOSFET offers low maximum drain-source resistance of 50 milliohms, helping to minimize conduction losses during operation. The device can safely dissipate up to 3.3 watts of power, supporting rugged and reliable performance across temperature extremes from -55°C to 150°C.
Its gate charge rating of 6.5 nanocoulombs at gate-source voltage (Vgs) enables fast switching speeds, making it suitable for switching power supplies, motor controls, and other high-speed applications. The maximum gate-source voltage rating ranges between -16 V and +16 V, providing protection within standard drive voltages.
Physical dimensions of length 6.5 mm, width 3.5 mm, and height 1.8 mm help engineers integrate this MOSFET seamlessly into PCB designs requiring compact form factors. Features enhancement mode for efficient switching performance.
Compact 4-pin SOT-223 surface mount package. Low on-resistance for reduced power loss. High continuous drain current of 6.5 Amps. Wide operating temperature range from -55°C to 150°C. Fast switching with low gate charge.
Adequate power dissipation of 3.3 Watts. Robust voltage tolerances suited for various electronic circuits. Reliable for industrial, automotive, and consumer electronics applications.
This MOSFET is widely used in electronics manufacturing for applications such as motor drivers, power management circuits, and switching regulators. Its ST Microelectronics heritage ensures quality and performance demanded by design engineers.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.5 A.
It has a maximum drain-source voltage rating of 30 V.
This MOSFET is housed in a compact 4-pin SOT-223 surface mount package.
The maximum power dissipation rated for this model is 3.3 watts.
The typical gate charge at gate-source voltage (Vgs) is 6.5 nanocoulombs.
It can operate across a wide temperature range from -55°C to 150°C.
The maximum gate-source voltage tolerance ranges from -16 V to +16 V.
The physical dimensions are 6.5 mm in length, 3.5 mm in width, and 1.8 mm in height.
The maximum drain-source resistance is 50 milliohms.
This model is suitable for power switching and amplification applications, including motor drivers and power management circuits.
This device utilizes an N-channel configuration.
The forward voltage drop is approximately 1.5 volts.
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