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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 10 A 600 V Enhancement 3-Pin TO-220 STP10NK60ZFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STP10NK60ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 750mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 50nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Features MDmesh SuperMESH technology for improved performance.
- Operates with an enhancement channel mode.
- Has a maximum power dissipation rating of 35 watts.
- Designed with a low typical gate charge of 50 nC at 50 Vgs.
- Maximum drain-source resistance is 750 milliohms.
- Supports a wide temperature range from -55°C to 150°C.
- Package includes 3 pins suitable for through-hole mounting.
- Maximum gate-source voltage ranges between -30 V and +30 V.
Product Description
STMicroelectronics STP10NK60ZFP is an N-Channel MDmesh SuperMESH MOSFET designed for high-efficiency power switching applications. It features a continuous drain current capacity of 10 A and supports a drain-source voltage of up to 600 V, making it suitable for demanding industrial, power supply, and electronic control systems.
The enhancement-mode transistor comes in a robust TO-220 package with 3 pins, arranged for easy through-hole mounting on PCBs. Its low typical gate charge of 50 nC at 50 V gate voltage ensures efficient switching with reduced losses. The maximum drain-source resistance of 750 milliohms contributes to minimal conduction losses and improved thermal performance.
Operating temperatures range from -55°C to 150°C, enabling reliable functioning in a variety of environmental conditions. The device supports gate-source voltages from -30 V to +30 V and features a forward voltage of 1.6 V. Compact physical dimensions (length 10.4 mm, height 9.3 mm, width 4.6 mm) allow for versatile integration into electronic circuits.
Features MDmesh SuperMESH technology for enhanced electrical performance. Through-hole TO-220 package suited for industrial and consumer electronics. High maximum power dissipation rating of 35 W for demanding applications.
Wide temperature operating range from -55°C to +150°C for reliability. 3-pin design facilitates straightforward PCB mounting. Low gate charge to optimize switching efficiency. Robust gate-source voltage tolerance (-30 V to +30 V).
Compact dimensions fit various design requirements.
This MOSFET ideal for use in power management, motor control, power inverters, and switching regulators across industrial, commercial, and laboratory applications. Discover more quality semiconductor components and power switches in the Electronics & Electricals category at EnvMart for your design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10 A.
It supports a maximum drain-source voltage of 600 V.
The typical gate charge at 50 Vgs is 50 nC.
The maximum power dissipation rating is 35 W.
The dimensions are 10.4 mm in length, 9.3 mm in height, and 4.6 mm in width.
The maximum gate-source voltage ranges between -30 V and +30 V.
The maximum drain-source resistance is 750 milliohms.
It can operate within a temperature range from -55°C to 150°C.
This model comes in a TO-220 package type.
It has 3 pins suitable for through-hole mounting.
This MOSFET is an N-channel type.
It is suitable for power management, motor control, power inverters, and switching regulators.
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