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Nexperia Small Signal NPN Transistor 200mA 15V 3-Pin SOT-23 PMBT2369,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model PMBT2369,215
Width 1.4mm
Mount Type Surface
Series PMBT2369
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 15V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 40V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 200mA
Transistor Configuration Single
Maximum Transition Frequency ft 500MHz
onsemi Transistor, 200 mA NPN, 15 V, 3-Pin SOT-23Brand onsemi

Key Features

  • Handles a maximum DC collector current of 200 mA.
  • Maximum collector-emitter voltage of 15 V ensures suitability for low voltage applications.
  • Compact SOT-23 package with 3 pins for surface mounting.
  • Maintains operation over temperature range from -65°C to 150°C.
  • Low power dissipation of 250 mW for efficient thermal management.
  • High maximum transition frequency up to 500 MHz for fast switching.
  • Meets RoHS standards and automotive standard AEC-Q101 for reliability.
  • Minimum DC current gain (hFE) of 20 for effective amplification.

Product Description

Nexperia PMBT2369,215 is a small signal NPN bipolar transistor designed for low power switching and amplifier applications. It supports a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 15 V, housed in a compact 3-pin SOT-23 surface mount package.

This transistor operates reliably within a wide temperature range from -65°C to 150°C, making it suitable for industrial, automotive, and general electronic use cases. The maximum transition frequency of 500 MHz ensures high-speed switching performance, essential for RF and high-frequency amplifier circuits.

The device offers a low maximum power dissipation of 250 mW, supporting efficient thermal management in compact electronic designs. It complies with RoHS and automotive standard AEC-Q101, assuring environmental safety and automotive-grade quality.

Typical applications include signal amplification, switching circuits, and integration in discreet semiconductor modules within electronic devices used in automotive electronics, industrial instrumentation, and consumer electronics.

Handles a maximum DC collector current of 200 mA. Maximum collector-emitter voltage of 15 V ensures suitability for low voltage applications. Compact SOT-23 package with 3 pins for surface mounting. Maintains operation over temperature range from -65°C to 150°C.

Low power dissipation of 250 mW for efficient thermal management. High maximum transition frequency up to 500 MHz for fast switching. Meets RoHS standards and automotive standard AEC-Q101 for reliability. Minimum DC current gain (hFE) of 20 for effective amplification.

Dimensions approximately 3 mm length, 1.4 mm width, and 1.1 mm height. Designed as single configuration NPN bipolar transistor suitable for discrete semiconductor applications.

This PMBT2369,215 transistor from Nexperia is widely used in electronics manufacturing for reliable, cost-effective small signal applications. Browse EnvMart's extensive selection of Bipolar Transistors for complementary components.

Nexperia Small Signal NPN Transistor 200mA 15V 3-Pin SOT-23 PMBT2369,215
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Frequently Asked Questions

The maximum DC collector current for this model is 200 mA.

This transistor has a maximum collector-emitter voltage rating of 15 V.

It is housed in a compact SOT-23 package with 3 pins for surface mounting.

The operating temperature range for this model is from -65°C to 150°C.

This transistor supports a maximum power dissipation of 250 mW.

The maximum transition frequency is up to 500 MHz, allowing for fast switching performance.

The minimum DC current gain (hFE) is 20, which is effective for amplification.

Yes, it meets RoHS standards and automotive standard AEC-Q101 for reliability.

The dimensions are approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

It is suitable for low power switching and amplifier applications in industrial, automotive, and general electronic use cases.

This model is a small signal NPN bipolar transistor designed for discrete semiconductor applications.

The maximum emitter-base voltage (VEBO) is 5 V.

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