Nexperia P-Channel MOSFET, Type BSS84,215, 130 mA, 50 V Enhancement Mode, 3-Pin SOT-23 Package

Nexperia BSS84,215 is a Type P-Channel Enhancement Mode MOSFET designed for efficient semiconductor switching in electronic circuits. It features a maximum continuous drain current of 130 mA and a maximum drain-source voltage of 50 V, making it suitable for low power and medium voltage electronic applications. Packaged in a space-saving 3-pin SOT-23 surface mount type, this MOSFET supports automated PCB assembly and compact circuit design.

This device offers a low maximum drain-source resistance (Rds) of 10 Ohms, improving conduction efficiency and minimizing power loss. With a maximum power dissipation of 250 mW, the transistor reliably supports thermal stability across various environments. Its typical gate charge of 0.26 nC allows rapid switching, beneficial in high-frequency switching power supplies and signal processing.

The MOSFET operates in extreme temperature conditions ranging from -65°C up to 150°C, suitable for industrial and automotive environments, with compliance to the automotive AEC-Q101 standard assuring component quality and reliability. Compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height allow for use in dense electronic assemblies.

This product is manufactured in China and is widely used in power management, signal switching, and electronic control modules in industrial, automotive, and consumer electronics. It integrates seamlessly with other semiconductor components in specialized electronic circuits requiring P-Channel MOSFETs.

Type P channel enhancing switching MOSFET optimized for various electronic applications. Maximum continuous drain current of 130 mA supports lower power circuits. Drain-Source voltage rating of 50 V suitable for medium voltage operations.

Compact 3-pin SOT-23 surface mount package minimizing PCB space requirements. Low drain-source resistance of 10 Ohms enhances efficiency and reduces losses. Peak power dissipation rated at 250 mW to maintain stable operation.

Operates reliably at temperatures from -65°C to 150°C ensuring performance over wide temperature ranges. Conforms to automotive standard AEC-Q101 for high-quality semiconductor applications. Typical gate charge of 0.26 nC allowing fast switching speed.

Compact dimensions facilitate integration into dense circuit boards.

Ideal for industrial automation, automotive electronics, power supplies, and signal switching use cases. Explore the Electronics & Electricals category on EnvMart for similar semiconductor components and MOSFET options from leading manufacturers.