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Nexperia Type P-Channel Enhancement MOSFET, 12.1 A, 20 V, 81 W Power Dissipation, 8-Pin MLPAK33 PXP020-20QXJ

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Nexperia Type P-Channel Enhancement MOSFET, 12.1 A, 20 V, 81 W Power Dissipation, 8-Pin MLPAK33 PXP020-20QXJ

Name: Nexperia Type P-Channel Enhancement MOSFET, 12.1 A, 20 V, 81 W Power Dissipation, 8-Pin MLPAK33 PXP020-20QXJ
Brand: Nexperia
SKU: 115558
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	PXP020-20QXJ
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	MLPAK33
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type P
Maximum Continuous Drain Current Id	12.1A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	13.6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	81W
Maximum Gate Source Voltage Vgs	20V

Key Features

Features a surface-mount 8-pin MLPAK33 package for efficient integration.
Includes trench MOSFET technology for low threshold voltage operation.
Capable of dissipating up to 81 watts of power for robust performance.
Operates reliably between temperatures of -55°C to 175°C.
Maximum gate-source voltage rating of 20 V ensures safe switching control.
Designed as a high-side load switch suitable for battery management applications.
Ideal for DC-to-DC conversion and switching circuit implementations.
Provides low maximum drain-source resistance at 13.6 milliohms for efficiency.

Product Description

The Nexperia PXP020-20QXJ is a Type P-Channel enhancement mode MOSFET designed for industrial and commercial electronic applications. Packaged in an 8-pin MLPAK33 surface mount device (SMD), it incorporates advanced trench MOSFET technology which provides a low threshold voltage for efficient switching performance.

With a maximum continuous drain current of 12.1 A and a maximum drain-source voltage rating of 20 V, this transistor supports high-current load scenarios while maintaining safe and reliable operation. The device dissipates up to 81 watts, making it suitable for high-power electronic circuits.

Its operation temperature range extends from -55°C to 175°C, allowing use in harsh environmental conditions while ensuring durability and long service life. The maximum gate-source voltage is rated at 20 V, which protects the gate from voltage stress during switching operations.

This MOSFET is typically used as a high-side load switch in battery management systems, DC-to-DC converters, and various switching circuit applications within the electronics and semiconductor industry. The low maximum drain-source resistance of 13.6 milliohms ensures minimal power loss and high efficiency in switching applications.

Surface mount 8-pin MLPAK33 package. Type P-Channel enhancement mode transistor with trench MOSFET technology. 12.1 A continuous drain current capacity. 20 V maximum drain-source voltage. 81 W maximum power dissipation. Operating temperature range: -55°C to 175°C.

Maximum gate-source voltage: 20 V. Low drain-source resistance of 13.6 mΩ for efficient switching. No specific industry or automotive standards approvals.

This product is a reliable solution for industrial electronics, semiconductor design, power management, and control systems. Its robust specifications and advanced technology make it a suitable component in manufacturing, telecommunications, and power electronics applications.

Explore more semiconductor components and discrete MOSFET options in the Electronics & Electricals category on EnvMart for industrial and laboratory applications.