Nexperia Type P-Channel Enhancement MOSFET, 20.2 A Continuous Drain Current, 20 V Maximum Drain-Source Voltage PXP8R3-20QXJ

Nexperia PXP8R3-20QXJ is a Type P-channel enhancement mode MOSFET designed with trench MOSFET technology and housed in an 8-pin MLPAK33 plastic surface-mount package. It features a maximum continuous drain current of 20.2 A and a maximum drain-source voltage of 20 V, making it suitable for robust power switching applications.

This MOSFET offers a low threshold voltage and a minimal on-resistance of 13.6 mΩ, enabling high efficiency and fast switching performance. Its maximum power dissipation rating of 81 W supports thermal endurance under heavy load conditions. The device operates reliably across a wide temperature range from minus 55°C to 175°C and supports a maximum gate-source voltage of 20 V, ensuring versatility for various electronic designs.

Applications include high-side load switches, battery management circuits, DC-to-DC converters, and general switching circuits in industrial, commercial, and consumer electronic equipment. Its compact 8-pin MLPAK33 package facilitates easy integration into surface-mount PCB layouts, lending to compact and efficient designs.

Type P enhancement mode for efficient switching. Continuous drain current of 20.2 A for high-current applications. Maximum drain-source voltage of 20 V for device protection. Low on-resistance of 13.6 milliohms reduces power losses.

Wide operating temperature range ensures reliability. 81 W power dissipation capability for thermal management. 8-pin MLPAK33 package supports surface mounting. Trench MOSFET technology for advanced performance. Suitable for battery management and DC-to-DC conversion.

This MOSFET is ideal for use in industrial, electronic components, semiconductor assemblies, power control systems, and other professional applications requiring high current and efficient switching.

Explore a wide range of semiconductor devices and MOSFETs in the Electronics & Electricals category at EnvMart.