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Nexperia Type P-Channel MOSFET, 22.2 A, 30 V Enhancement Mode, 8-Pin MLPAK33 PXP6R1-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP6R1-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 22.2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- This device features enhancement mode operation for efficient power control.
- Maximum continuous drain current of 22.2 A supports high load handling.
- Maximum drain-source voltage of 30 V ensures operation in moderate voltage environments.
- MLPAK33 (SOT8002) plastic package provides a compact surface mount footprint.
- Trench MOSFET technology offers low threshold voltage and improved switching performance.
- Maximum power dissipation of 81 W ensures robust performance under load.
- Operating temperature range from -55°C to 175°C supports harsh industrial environments.
- Maximum gate-source voltage of ±20 V protects device integrity.
Product Description
The Nexperia PXP6R1-30QLJ is a Type P-Channel MOSFET manufactured using trench MOSFET technology, housed in an 8-pin MLPAK33 surface mount package. It provides a maximum continuous drain current of 22.2 A and supports a maximum drain-source voltage of 30 V, making it ideal for efficient power switching and control in electronic circuits.
This device operates in enhancement mode, delivering low threshold voltage and high performance switching characteristics. Its trench MOSFET construction improves operational efficiency and thermal performance, with a maximum power dissipation rating of 81 W.
The MOSFET is designed to operate reliably in extreme industrial conditions, with a wide operating temperature range from -55°C to 175°C and a maximum gate-source voltage of 20 V. The 8-pin MLPAK33 package facilitates surface mounting on printed circuit boards, optimizing space and integration.
Typical applications include high-side load switching, battery management systems, and DC-to-DC converters commonly used in electronic component manufacturing, power electronics, automotive electronics, and industrial control systems.
This device features enhancement mode operation for efficient power control. Maximum continuous drain current of 22.2 A supports high load handling. Maximum drain-source voltage of 30 V ensures operation in moderate voltage environments.
MLPAK33 (SOT8002) plastic package provides a compact surface mount footprint. Trench MOSFET technology offers low threshold voltage and improved switching performance. Maximum power dissipation of 81 W ensures robust performance under load.
Operating temperature range from -55°C to 175°C supports harsh industrial environments. Maximum gate-source voltage of ±20 V protects device integrity. Suitable for applications such as high-side load switching, battery management, and DC-to-DC conversion.
Explore the full range of high-quality MOSFETs and semiconductor components from Nexperia at EnvMart for industrial, electronic manufacturing, and innovative project needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 22.2 A, allowing it to handle high load requirements efficiently.
This device supports a maximum drain-source voltage of 30 V, suitable for moderate voltage applications.
The operating temperature range for this model is from -55°C to 175°C, making it suitable for harsh industrial environments.
It is housed in an 8-pin MLPAK33 (SOT8002) plastic package, designed for surface mounting on printed circuit boards.
The maximum power dissipation for this MOSFET is 81 W, ensuring robust performance under load conditions.
The maximum gate-source voltage for this model is ±20 V, which helps protect the device's integrity during operation.
This device is a Type P-Channel MOSFET, which is designed for enhancement mode operation.
The maximum drain-source resistance is 13.6 mΩ, which contributes to its efficient performance.
Typical applications for this model include high-side load switching, battery management systems, and DC-to-DC converters.
The MLPAK33 package has 8 pins, facilitating its integration into electronic circuits.
This device utilizes trench MOSFET technology, which offers low threshold voltage and improved switching performance.
The country of origin for this model is India, where it is manufactured to meet industry standards.
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