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Nexperia P-Channel Enhancement MOSFET 10.3 A, 30 V, 81 W Power Dissipation, 8-Pin MLPAK33 PXP011-20QXJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP011-20QXJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Equipped with an 8-pin MLPAK33 surface mount package for compact PCB integration.
- Utilizes trench MOSFET technology for low threshold voltage and enhanced performance.
- Designed for high-side load switching and battery management circuits.
- Supports DC-to-DC conversion and switching circuits in industrial electronics.
- Operates over a wide temperature range from -55°C to 175°C for robustness.
- Maximum gate-source voltage is 20 V ensuring safe and reliable gate control.
- Maximum drain-source resistance of 13.6 mΩ minimizes conduction losses.
- Surface mounting simplifies PCB assembly and optimizes space usage.
Product Description
Nexperia PXP011-20QXJ P-Channel Enhancement MOSFET is engineered for high efficiency and reliable operation in power semiconductor applications. It features a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V, capable of handling up to 81 W power dissipation. Packaged in an 8-pin MLPAK33 surface mount SMD package, it incorporates trench MOSFET technology that provides low threshold voltage and excellent switching characteristics.
This MOSFET is suitable for high-side load switching, battery management systems, and DC-DC conversion circuits commonly found in industrial, automotive, and commercial electronic equipment. It supports continuous operation across a broad temperature range from -55°C to 175°C, ensuring durability in harsh environments. The maximum gate-source voltage rating of 20 V and a very low drain-source resistance of 13.6 mΩ contribute to its efficient power handling and minimal losses.
Its surface mount design facilitates automated assembly and space-saving on PCBs, ideal for compact and high-density electronic systems. Although it does not carry automotive standard approvals, it remains suitable for a wide spectrum of industrial and powering applications.
8-pin MLPAK33 package ensures space-efficient PCB mounting. Trench MOSFET technology for enhanced performance and lower losses. High-side load switching capability for power management circuits. Battery management and DC-to-DC converter compatibility.
Wide operating temperature range from -55°C to 175°C supports robust applications. Maximum gate-source voltage of 20 V enables safe control. Low drain-source resistance of 13.6 mΩ minimizes power dissipation. Suitable for industrial, commercial, and power electronics systems.
Compact surface mount device enhances manufacturing efficiency. Explore the Electronics & Electricals category at EnvMart for more semiconductor components and power devices from renowned brands like Nexperia.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.3 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It is capable of handling up to 81 W of power dissipation.
The operating temperature range is from -55°C to 175°C.
It is packaged in an 8-pin MLPAK33 surface mount package.
The maximum gate-source voltage is 20 V, ensuring safe gate control.
The maximum drain-source resistance is 13.6 mΩ, which helps minimize conduction losses.
This model is suitable for high-side load switching, battery management systems, and DC-DC conversion circuits.
The surface mount design simplifies PCB assembly and optimizes space usage, making it ideal for compact electronic systems.
It utilizes a P-channel enhancement mode.
Trench MOSFET technology provides low threshold voltage and enhances performance, contributing to efficient power handling.
The country of origin for this product is India.
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