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Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK88 BUK7S0R5-40HJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | BUK7S0R5-40HJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK88 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Utilizes Trench 9 low ohmic super junction technology for superior performance.
- Housed in a copper-clip LFPAK88 package ensuring efficient thermal management.
- Continuous drain current of 10.3 A with maximum power dissipation of 81 W.
- Operating temperature range from -55 °C up to 175 °C for high reliability in thermally demanding environments.
- Features a maximum gate-source voltage of 20 V for robust switching operation.
- Low source inductance and thermal resistance enable high efficiency and current spreading.
- Designed for automotive applications yet meets beyond AEC-Q101 standards.
- Compatible with 12 V automotive systems and 48 V DC/DC systems on 12 V secondary side.
Product Description
Nexperia BUK7S0R5-40HJ Type N-Channel MOSFET is engineered using advanced Trench 9 super junction technology providing low on-resistance and excellent current handling capability. This device is housed in a copper-clip LFPAK88 package, facilitating efficient thermal dissipation crucial for demanding industrial and automotive environments.
The MOSFET is designed for maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V, making it suitable for power switching applications in electronic components and semiconductor systems. Operating safely across a temperature range from -55 °C to 175 °C, it guarantees reliable performance in harsh thermal conditions.
The device features a maximum gate-source voltage of 20 V, low thermal resistance, and low source inductance, enhancing current spreading and enabling ultra-high performance power switching with reverse polarity protection. It fulfills automotive requirements surpassing the AEC-Q101 standard.
This MOSFET is optimal for use in 12 V automotive systems, 48 V DC/DC converters on 12 V secondary sides, and control of higher power motors, lamps, and solenoids. The thin package design and copper clip enable superior thermal efficiency and mechanical durability.
Trench 9 low ohmic super junction technology enhances performance and efficiency. Copper-clip LFPAK88 package provides excellent thermal management. Supports automotive and industrial power switching applications. Meets and exceeds AEC-Q101 requirements ensuring automotive grade quality.
Wide operating temperature range for robustness in extreme environments. Reverse polarity protection for circuit safety. Low Rds(on) allows for power saving and improved switching efficiency. Supports 12 V and 48 V automotive power systems.
Explore additional Nexperia MOSFET products to meet various semiconductor and power management application needs. Discover engineering insights and design resources at EnvMart for advanced industrial electronic components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.3 A.
The maximum drain-source voltage is 30 V.
It operates within a temperature range from -55 °C to 175 °C.
The maximum power dissipation is 81 W.
This MOSFET is housed in a LFPAK88 package.
The maximum gate-source voltage is 20 V.
It supports surface mounting.
This model features a Type N channel.
The maximum drain-source resistance is 13.6 mΩ.
Yes, it is designed for automotive applications and meets AEC-Q101 standards.
It utilizes a copper-clip LFPAK88 package for efficient thermal management.
It is suitable for power switching applications in 12 V automotive systems and 48 V DC/DC converters.
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