STMicroelectronics STripFET II Type N-Channel MOSFET, 80 A, 55 V, 3-Pin TO-220 STP80NF55-06

STMicroelectronics STP80NF55-06 STripFET II Type N-Channel MOSFET delivers high efficiency and power handling for electronic circuits requiring robust switching capabilities. Rated for 80 A maximum continuous drain current and 55 V drain-source voltage, this MOSFET supports demanding industrial and electronic applications.

Its low gate charge of 142 nC at specified gate voltage allows faster switching speeds, reducing switching losses in power electronics designs. The enhancement-type channel mode ensures reliable on/off control making it suitable for power management, motor control, and automotive circuits.

The device comes in a 3-pin TO-220 through hole package which provides excellent thermal dissipation and sturdy mounting for industrial and commercial use. Maximum power dissipation is 300 W enabling the MOSFET to handle substantial loads safely.

Operating in a temperature range of -55°C to 175°C, this MOSFET is equipped to perform reliably in harsh environments including industrial automation, HVAC systems, and embedded electronics.

Key electrical parameters include a maximum drain-source resistance of 6.5 mΩ that ensures minimal conduction losses and a forward voltage of 1.5 V. The maximum gate-source voltage of 20 V protects the device against voltage spikes during switching.

Compact physical dimensions of 10.4 mm length, 9.15 mm height, and 4.6 mm width make integration into PCB designs straightforward. The MOSFET does not carry automotive standard certifications but complies with all relevant semiconductor quality standards.

Features ultra-low gate charge and low on-resistance for efficient switching performance. Packaged in a 3-pin TO-220 through hole package suitable for robust mounting. Maximum power dissipation of 300 W enables handling of high power loads.

Wide operating temperature range from -55°C to 175°C supports demanding environments. Typical gate charge of 142 nC at Vgs enhances fast switching applications. Maximum drain-source resistance of 6.5 mΩ ensures low conduction losses.

Maximum gate-source voltage rating of 20 V protects against gate overvoltage. Forward voltage of 1.5 V for optimized conduction characteristics. Designed for enhancement mode operation ensuring control precision. Compact dimensions with 10.4 mm length, 9.15 mm height, and 4.6 mm width.

This STMicroelectronics MOSFET is ideal for use in industrial power electronics, automotive electronics, motor drives, and general semiconductor applications where high current and voltage handling with efficient switching are critical.

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