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Infineon IPG20N06S4L-14A 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin SuperSO8 5 x 6 IPG20N06S4L-14A
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPG20N06S4L-14A |
| Series | IPG20N06S4L-14A |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS Compliant |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 13.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 1.3V |
Key Features
- Supports continuous drain current of 20 amperes for reliable power handling.
- Operates at a maximum drain source voltage of 60 volts suitable for automotive applications.
- Features enhancement mode channel type for efficient switching.
- Typical gate charge is 39 nanoCoulombs at Vgs, optimizing drive requirements.
- Maximum power dissipation capacity is 50 watts ensuring thermal reliability.
- Designed to operate between -55°C to 175°C for wide temperature tolerance.
- 8-pin SuperSO8 5 x 6 package supports automated optical inspection processes.
- Complies with automotive standard AEC-Q101 for quality assurance.
Product Description
Infineon IPG20N06S4L-14A is a high-performance automotive-grade N-channel MOSFET designed for robust power switching applications. It handles a maximum continuous drain current of 20 amperes and withstands up to 60 volts drain source voltage, making it suitable for modern automotive and industrial power electronics.
Housed in an 8-pin SuperSO8 (PG-TDSON-8) compact package measuring 5 x 6 mm, this MOSFET supports enhancement mode operation for efficient load switching. It ensures optimized gate drive at a typical charge of 39nC, allowing for reduced switching losses and fast response.
The device supports power dissipation up to 50 watts and operates reliably over a broad temperature range from -55°C to 175°C, suited for harsh automotive environments. Its low on-resistance of 13.7 milliohms further improves conduction efficiency.
Manufactured with quality controls conforming to the automotive industry standard AEC-Q101, the MOSFET is also RoHS compliant, environmentally friendly, and 100% avalanche tested to ensure reliability under transient conditions. The dual-element design per chip facilitates higher current handling and improved performance compactly.
This MOSFET is feasible for automated optical inspection (AOI), simplifying manufacturing verification processes for PCB assembly. It is ideal for automotive power management, industrial motor control, battery management systems, and DC-DC converter circuits.
Supports continuous drain current of 20 amperes for reliable power handling. Operates at a maximum drain source voltage of 60 volts suitable for automotive applications. Features enhancement mode channel type for efficient switching.
Typical gate charge is 39 nanoCoulombs at Vgs, optimizing drive requirements. Maximum power dissipation capacity is 50 watts ensuring thermal reliability. Designed to operate between -55°C to 175°C for wide temperature tolerance.
8-pin SuperSO8 5 x 6 package supports automated optical inspection processes. Complies with automotive standard AEC-Q101 for quality assurance. RoHS compliant and tested for 100% avalanche ruggedness reliability. Dual N-channel elements integrated per chip enhancing performance density.
EnvMart offers this Infineon IPG20N06S4L-14A MOSFET as a reliable solution in the category of semiconductor power MOSFETs. Explore more automotive and industrial semiconductor components to meet your design and manufacturing needs.
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Frequently Asked Questions
The Infineon IPG20N06S4L-14A can handle a maximum continuous drain current of 20 amperes.
It operates at a maximum drain source voltage of 60 volts, making it suitable for automotive applications.
The typical gate charge is 39 nanoCoulombs at Vgs, which optimizes the drive requirements for this device.
The maximum power dissipation capacity is 50 watts, ensuring thermal reliability during operation.
It is designed to operate reliably over a broad temperature range from -55°C to 175°C.
It complies with the automotive standard AEC-Q101, ensuring quality assurance for automotive applications.
There are 2 elements per chip, which enhances performance density and current handling capabilities.
The maximum gate source voltage (Vgs) is 16 volts, which is important for proper operation.
The forward voltage is 1.3 volts, relevant for its performance in circuits.
Yes, it is RoHS compliant, indicating that it meets environmental standards for hazardous substances.
It is suitable for automotive power management, industrial motor control, battery management systems, and DC-DC converter circuits.
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