Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN2R0-55YLHX

Nexperia PSMN2R0-55YLHX Type N-Channel MOSFET is a high-performance discrete semiconductor device housed in a compact LFPAK56E surface mount package with 4 pins. It is specifically engineered for 36 V battery powered applications requiring strong avalanche capability, efficient linear mode performance, and operation at high switching frequencies.

The device supports a continuous drain current of 10.3 A and can withstand a maximum drain-source voltage of 30 V. It features a very low maximum drain-source resistance of 13.6 mΩ, which ensures reduced power loss and improved energy efficiency in circuits.

Operating temperature range is broad, from -55°C to 150°C, allowing reliable performance in harsh environmental conditions. The MOSFET integrates Nexperia's unique SchottkyPlus technology, which offers a Schottky-like switching performance with a low IDSS leakage current, making it ideal for low EMI designs.

Other notable features include a maximum gate-source voltage of 20 V, a maximum power dissipation rating of 12.5 W, and avalanche rating for improved robustness and reliability in demanding industrial and electronic applications.

This MOSFET is suitable for use in industrial electronics, power management, automotive electronics, battery management systems, and various other semiconductor and electronics components applications requiring efficient and robust switching devices.

The MOSFET features a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V. It has a surface mount LFPAK56E package with 4 pins for compact and efficient PCB mounting. Maximum drain-source resistance is 13.6 mΩ ensuring low conduction losses.

Supports a maximum power dissipation of 12.5 W with operating temperatures ranging from -55°C to 150°C. The device includes unique SchottkyPlus technology for improved switching performance and low leakage current. It supports maximum gate-source voltage of 20 V and is avalanche rated for robustness.

Low gate charge parameters enable superfast switching with minimal electromagnetic interference.

Explore a wide range of MOSFETs and semiconductor devices at EnvMart's comprehensive electronics components category to find the optimal solution for your industrial or commercial electronic designs.