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Nexperia Type N-Channel Enhancement MOSFET, 7.5 A, 30 V, 12.5 W Power Dissipation, 8-Pin Surface Mount MLPAK33 PXN018-30QLJ

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Nexperia Type N-Channel Enhancement MOSFET, 7.5 A, 30 V, 12.5 W Power Dissipation, 8-Pin Surface Mount MLPAK33 PXN018-30QLJ

Name: Nexperia Type N-Channel Enhancement MOSFET, 7.5 A, 30 V, 12.5 W Power Dissipation, 8-Pin Surface Mount MLPAK33 PXN018-30QLJ
Brand: Nexperia
SKU: 114613
Price: 1.23 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	PXN018-30QLJ
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	MLPAK33
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type N
Maximum Continuous Drain Current Id	7.5A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	13.6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	12.5W
Maximum Gate Source Voltage Vgs	20V

Key Features

This MOSFET integrates Trench MOSFET technology for improved performance.
It is logic-level compatible, enabling efficient switching applications.
Maximum power dissipation is rated at 12.5 W for reliable operation.
Operates within a temperature range from -55°C to 150°C for robust industrial use.
Maximum gate source voltage is 20 V, ensuring device integrity.
The MLPAK33 package size is compact with a 3.3 x 3.3 mm footprint.
Surface mount type with 8 pins facilitates PCB assembly and design flexibility.
Maximum drain source resistance Rds(on) is 13.6 mΩ, optimizing efficiency.

Product Description

Nexperia PXN018-30QLJ Type N-Channel Enhancement MOSFET is a high-performance semiconductor device designed for power switching and amplification applications. It employs Trench MOSFET technology within a compact MLPAK33 (SOT8002) surface-mounted plastic package.

With a maximum continuous drain current of 7.5 A and a maximum drain source voltage of 30 V, this MOSFET is suitable for industrial, electronics manufacturing, and embedded system applications requiring efficient power management.

The device features logic-level compatibility, facilitating easy integration in low voltage control circuits. It is rated for maximum power dissipation of 12.5 W, enabling reliable operation under moderate power conditions.

Operating temperature specifications range from -55°C minimum to 150°C maximum, making it robust for harsh environments in automotive, industrial, and laboratory use. The maximum gate source voltage rating of 20 V ensures safe gate drive operation.

The compact MLPAK33 package with an 8-pin arrangement and a small footprint of 3.3 x 3.3 mm supports efficient PCB design and assembly in space-constrained applications. This MOSFET utilizes Trench MOSFET technology for enhanced performance and lower on-resistance.

Logic-level compatible operation simplifies interfacing with low-voltage logic circuits. Compact MLPAK33 surface mount package enables dense PCB layouts. Wide operating temperature range supports diverse industrial environments.

Maximum power dissipation of 12.5 W supports moderate power applications. Low drain-source resistance of 13.6 mΩ improves efficiency and reduces heat generation.

Ideal applications include power management in consumer electronics, industrial controls, and automotive electronics. This product supports designers needing efficient, reliable discrete semiconductor switches.

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