Nexperia Type N-Channel MOSFET 42 A 60 V Enhancement Mode 8-Pin MLPAK33 PXN012-60QLJ

Nexperia PXN012-60QLJ is a high-performance N-channel enhancement mode power MOSFET. With a maximum continuous drain current of 42 A and a maximum drain-source voltage of 60 V, this MOSFET operates efficiently in demanding power electronics applications.

The device comes in a thermally efficient 8-pin MLPAK33 surface mount package, measuring 3.3 mm by 3.3 mm, optimizing space on PCB designs. The trench MOSFET technology ensures low on-resistance of only 13.6 mΩ, minimizing conduction losses and heat generation.

This transistor supports a maximum gate-source voltage of 20 V and is rated for power dissipation up to 12.5 W. It operates reliably within a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial and commercial environments.

Designed for logic-level compatibility, it integrates seamlessly into circuits that require efficient switching and amplification, such as power management modules, motor drives, and electronic control units.

This MOSFET features a compact 8-pin MLPAK33 surface mount package. Maximum power dissipation of 12.5 W enhances thermal performance. Low drain-source resistance improves energy efficiency. Wide operating temperature range supports diverse industrial applications.

High continuous current rating ensures robust handling of loads. Logic-level compatible for easy integration in control circuits. Trench MOSFET technology delivers enhanced switching capabilities. Thermally efficient packaging reduces overall device heating.

Applications include power conversion systems, industrial electronics, electronic drivers, and other semiconductor needs within manufacturing and automation industries. Explore the wide range of Nexperia Power MOSFETs and related semiconductor products in EnvMart's comprehensive catalog for reliable component sourcing and superior performance.