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STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement Mode, 4-Pin TO-247 STWA32N65DM6AG
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 5.1mm |
| Length | 40.92mm |
| Model | STWA32N65DM6AG |
| Width | 15.8mm |
| Mount Type | Through Hole |
| Series | STW |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 320W |
| Typical Gate Charge Qg @ Vgs | 52.6nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET features an enhancement mode channel for efficient switching performance.
- It has a low maximum drain-source resistance of 45 milliohms for reduced conduction losses.
- Maximum power dissipation is rated at 320 watts to handle high load conditions.
- The device is AEC-Q101 qualified and includes automotive standard compliance for reliability.
- It supports a wide operating temperature range from -55°C to 150°C for robust applications.
- Package type is TO-247 with through-hole mounting and 4 pins for ease of integration.
- The maximum gate-source voltage is 25 volts ensuring stable gate drive control.
- Typical gate charge (Qg) is 52.6 nanocoulombs, minimizing switching losses.
Product Description
STMicroelectronics STWA32N65DM6AG is a high-performance N-Channel MOSFET designed for demanding power applications requiring up to 55 A continuous drain current and a maximum drain-source voltage of 30 V. This device utilizes an enhancement mode channel, delivering efficient switching with low RDS(on) to optimize power dissipation.
Packaged in a robust 4-pin TO-247 through-hole configuration, the MOSFET supports reliable mounting and thermal management. It boasts a maximum power dissipation of 320 W and is capable of operating within an extended temperature range from -55°C up to 150°C, making it suitable for industrial, automotive, and high-efficiency power electronics circuits.
This device is part of STMicroelectronics' MDmesh DM6 fast recovery diode series, featuring low recovery charge and time, enhancing switching efficiency in bridge topologies and zero-voltage switching phase converters. The AEC-Q101 qualification and UL standard approval confirm the MOSFET's reliability and robustness in automotive and industrial sectors.
Enhancement mode N-Channel MOSFET with 30 V max drain-source voltage. Maximum continuous drain current of 55 A with low conduction resistance (45 mΩ). 320 W maximum power dissipation for heavy-duty applications. Wide operating temperature range from -55°C to 150°C for harsh environments.
4-pin TO-247 package with through-hole mounting for secure integration. AEC-Q101 and UL approvals ensure automotive-grade quality and safety. Fast recovery body diode and zener-protected gate for durability under transient stress.
Low gate charge reduces switching power losses in high-frequency operations.
This MOSFET is ideal for use in industrial automation, power supplies, automotive electronics, HVAC drives, and renewable energy inverters. Its rugged design offers superior switching performance and efficiency gains in varied electronic power management systems.
Explore more semiconductor components from STMicroelectronics and optimize your designs with trusted, high-quality MOSFETs available on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It comes in a TO-247 package type with a through-hole mounting configuration.
The maximum power dissipation is rated at 320 W, suitable for handling high load conditions.
It operates within a wide temperature range from -55°C to 150°C.
The maximum gate-source voltage for this device is 25 V.
The typical gate charge (Qg) is 52.6 nanocoulombs, which helps minimize switching losses.
The dimensions are 40.92 mm in length, 15.8 mm in width, and 5.1 mm in height.
Yes, it is AEC-Q101 qualified, ensuring compliance with automotive standards.
The maximum drain-source resistance (RDS(on)) is 45 milliohms, which reduces conduction losses.
It is suitable for industrial automation, power supplies, automotive electronics, HVAC drives, and renewable energy inverters.
This model complies with UL standards, ensuring reliability and safety.
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