Infineon RF Bipolar Transistor NPN 80 mA 20 V 3-Pin SOT-23 BF771E6327HTSA1

Infineon BF771E6327HTSA1 RF Bipolar Transistor is a high-frequency NPN transistor designed primarily for use in RF modulator and amplifier circuits, such as those found in TV and VCR tuners. It supports a maximum DC collector current of 80 mA and a maximum collector-emitter voltage of 20 V, making it suitable for a variety of low to moderate power RF applications.

The transistor comes in a 3-pin SOT-23 surface mount package, allowing for compact and efficient PCB designs. It is capable of handling a maximum power dissipation of 580 mW, ensuring reliability in operation under typical conditions.

With a maximum transition frequency of 8 GHz, this device is suitable for high-frequency signals. Its operating temperature range from -65°C to 150°C makes it ideal for use in industrial and automotive environments, supported further by AEC-Q101 qualification for automotive standard compliance.

The transistor features a minimum DC current gain (hFE) of 70, providing good amplification properties. It includes protection specifications such as a maximum emitter-base voltage of 2 V and maximum collector-base voltage of 20 V. It is also RoHS-compliant and an ESD sensitive device, ensuring it meets current environmental and handling standards.

This RF bipolar transistor is excellent for industrial and automotive RF circuit designs. Its compact SOT-23 package facilitates surface mount assembly for modern electronics manufacturing. Suitable for use in amplifiers, modulators, and other signal processing applications.

RoHS compliance and AEC-Q101 qualification guarantee environmental and automotive reliability. Operates efficiently within a broad temperature range from -65°C to 150°C. Explore the full range of Infineon semiconductors and RF Bipolar Transistors at EnvMart for all your electronic component needs.