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STMicroelectronics Type N-Channel IGBT 50 A 650 V 3-Pin TO-247 Through Hole STGWA30H65DFB2
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 5.1mm |
| Length | 15.9mm |
| Model | STGWA30H65DFB2 |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | STG |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 50A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 167W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Supports a maximum power dissipation of 167 W ensuring efficient thermal management.
- Housed in a 3-pin TO-247 package suitable for through-hole mounting.
- Operates effectively within a temperature range from -55°C to 175°C.
- Features low collector-emitter saturation voltage for improved conduction efficiency.
- Incorporates a very fast and soft recovery co-packaged diode to minimize switching losses.
- Boasts a low thermal resistance to support stable operation under load.
- Designed with an advanced trench gate field-stop structure for optimal switching speed around 1 MHz.
Product Description
STMicroelectronics presents the STGWA30H65DFB2, a Type N-Channel Insulated Gate Bipolar Transistor (IGBT) tailored for efficient power switching in industrial and electronic applications. This component supports a maximum continuous collector current of 50 A and a collector-emitter voltage rating of 650 V, making it suitable for medium to high-power switching scenarios.
Encased in a 3-pin TO-247 package designed for through-hole mounting, the device is compact with physical dimensions of 15.9 mm length, 21.1 mm width, and 5.1 mm height. It maintains reliable performance across an operating temperature range from -55°C to 175°C and allows a maximum gate-emitter voltage of 20 V.
The STGWA30H65DFB2 features an advanced proprietary trench gate field-stop structure enhancing its conduction characteristics and reduces switching energy losses. It achieves a typical low collector-emitter saturation voltage of 1.65 V at 30 A, ensuring efficient operation at low current levels. Additionally, it includes a very fast and soft recovery co-packaged diode that minimizes tail current and switching losses during operation.
This transistor boasts a high maximum power dissipation of 167 W and low thermal resistance, enabling it to handle significant power levels with effective heat management. These features make it ideal for use in power control modules, motor drives, industrial control systems, and renewable energy applications.
Supports maximum continuous collector current of 50 A. Maximum collector-emitter voltage rated at 650 V. Power dissipation capability of 167 W. 3-pin TO-247 package with through-hole mount type. Operates between -55°C and 175°C.
Low collector-emitter saturation voltage enhances efficiency. Advanced trench gate field-stop structure enables fast switching near 1 MHz. Includes soft recovery diode reducing switching losses.
STMicroelectronics STGWA30H65DFB2 is manufactured in China and conforms to RoHS compliance standards. This high-quality transistor is well suited for demanding industrial, commercial, and laboratory power switching applications. Discover more products in the Discrete Semiconductor category, offering reliable electronic components for a range of technical solutions.
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Frequently Asked Questions
The maximum continuous collector current for the STGWA30H65DFB2 is 50 A.
This model has a collector-emitter voltage rating of 650 V.
The maximum power dissipation capability of this IGBT is 167 W.
The dimensions of the TO-247 package are 15.9 mm in length, 21.1 mm in width, and 5.1 mm in height.
It operates effectively within a temperature range from -55°C to 175°C.
The STGWA30H65DFB2 uses a through-hole mounting type.
The maximum gate-emitter voltage for this model is 20 V.
The advanced trench gate field-stop structure enhances conduction characteristics and reduces switching energy losses, allowing for optimal switching speed.
Yes, it incorporates a very fast and soft recovery co-packaged diode to minimize switching losses.
The typical collector-emitter saturation voltage is 1.65 V at 30 A.
The STGWA30H65DFB2 conforms to RoHS compliance standards.
This model is suitable for applications in power control modules, motor drives, industrial control systems, and renewable energy applications.
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