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Nexperia Type N-Channel MOSFET, 120 A, 60 V Enhancement Mode, 3-Pin TO-263 PSMN1R7-60BS,118
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 4.5mm |
| Length | 10.3mm |
| Model | PSMN1R7-60BS,118 |
| Width | 11mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 306W |
| Typical Gate Charge Qg @ Vgs | 137nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- The MOSFET is packaged in a 3-pin TO-263 surface mount package.
- It operates in enhancement mode, providing efficient switching and control.
- Maximum power dissipation is 306 W, suitable for high performance.
- Typical gate charge at Vgs is 137 nC, ensuring fast switching speeds.
- It has a low maximum drain-source resistance of 3.1 milliohms for minimal losses.
- Designed to operate over a wide temperature range from -55°C to 175°C.
- Maximum gate-source voltage is rated at ±20 V for flexibility in control circuits.
- Compact physical dimensions measure 10.3 mm in length, 11 mm width, and 4.5 mm height.
Product Description
Nexperia PSMN1R7-60BS,118 is a high-performance Type N-Channel MOSFET with a voltage rating of 60 V and maximum continuous drain current of 120 A. Packaged in a compact 3-pin TO-263 surface mount format, it is suited for demanding electronic applications requiring efficient power switching and low conduction losses.
This enhancement mode MOSFET features a maximum drain-source resistance (Rds) of only 3.1 mΩ, supporting high current loads while minimizing heat generation. The typical gate charge of 137 nC enables rapid switching, which makes it ideal for industrial, automotive, and power management circuits.
The device supports a wide operating temperature range from -55°C to 175°C, making it reliable under extreme environmental conditions. Its maximum gate-source voltage of ±20 V allows for robust gate control necessary in complex electronics.
Physical dimensions of 10.3 mm length, 11 mm width, and 4.5 mm height allow for space-efficient PCB designs in power electronics and semiconductor modules.
This MOSFET is manufactured in the Philippines under strict quality standards to ensure consistent performance and durability. It is a suitable choice for integration in power converters, motor drivers, and high current switching applications in industrial, automotive, and commercial electronics.
The MOSFET is packaged in a 3-pin TO-263 surface mount package. It operates in enhancement mode, providing efficient switching and control. Maximum power dissipation is 306 W, suitable for high performance. Typical gate charge at Vgs is 137 nC, ensuring fast switching speeds.
It has a low maximum drain-source resistance of 3.1 milliohms for minimal losses. Designed to operate over a wide temperature range from -55°C to 175°C. Maximum gate-source voltage is rated at ±20 V for flexibility in control circuits.
Compact physical dimensions measure 10.3 mm in length, 11 mm width, and 4.5 mm height. Manufactured in the Philippines maintaining high quality standards. Explore our comprehensive range of semiconductors and MOSFETs at EnvMart for reliable electronic components tailored to industrial and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
The maximum power dissipation for this unit is 306 W.
The typical gate charge at Vgs is 137 nC, which supports fast switching speeds.
The dimensions are 10.3 mm in length, 11 mm in width, and 4.5 mm in height.
The maximum drain-source resistance (Rds) is 3.1 mΩ, allowing for minimal losses.
It is designed to operate over a wide temperature range from -55°C to 175°C.
This model is packaged in a 3-pin TO-263 surface mount package.
The maximum gate-source voltage is rated at ±20 V, providing flexibility in control circuits.
This MOSFET is suitable for applications in power converters, motor drivers, and high current switching in industrial and automotive electronics.
This unit features a Type N channel and operates in enhancement mode.
It is manufactured in the Philippines under strict quality standards.
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