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Nexperia Type N-Channel MOSFET 100 A Continuous Drain Current 25 V Vds Surface Mount 4-Pin SOT-669 PSMN1R2-25YLC,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN1R2-25YLC,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 179W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Designed with enhancement mode operation for efficient switching.
- Features a low maximum drain-source resistance of 1.7 milliohms.
- Typical gate charge of 66 nano-Coulombs ensures rapid switching response.
- Capable of dissipating up to 179 W of power under maximum conditions.
- Operates reliably within a temperature range from -55°C to 175°C.
- Maximum gate-source voltage rated at ±20 V for robust gate control.
- Compact dimensions with a length of 5 mm, width of 4.1 mm, and height of 1.1 mm.
- Ideal for applications requiring high current handling and surface mount technology.
Product Description
The Nexperia PSMN1R2-25YLC,115 is a high-performance Type N-Channel MOSFET designed for demanding power applications. It supports a maximum continuous drain current of 100 A and a drain-source voltage rating of 25 V, making it suitable for efficient power switching and load management in modern electronic devices.
This MOSFET comes in a compact 4-pin SOT-669 surface mount package, facilitating easy integration onto printed circuit boards with limited space. The device features enhancement mode channel operation, enabling high switching efficiency and fast turn-on times.
With a low maximum drain-source resistance (Rds(on)) of 1.7 milliohms, the device minimizes conduction losses, improving overall energy efficiency. The typical gate charge of 66 nC supports rapid switching, which is critical in high-frequency applications.
The component can reliably dissipate up to 179 watts of power under specified conditions, accommodating high power demands while maintaining thermal stability. Its operational temperature range from -55°C to 175°C ensures durability in harsh industrial and automotive environments.
Additional mechanical specifications include a length of 5 mm, width of 4.1 mm, and height of 1.1 mm, making it suitable for compact designs. The maximum gate-source voltage is rated at ±20 V, offering robust gate control and protection.
Designed for surface mount technology in electronic circuits. Enables efficient power control for industrial and automotive systems. Supports demanding environments with extended temperature range. Compact footprint for space-constrained applications.
Ideal for electronic designs requiring high continuous current capacity.
This Nexperia MOSFET is widely used across electronics, power management, industrial automation, and automotive sectors, ensuring reliable and efficient switching performance. For more products in Semiconductor MOSFETs, browse EnvMart’s comprehensive catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This MOSFET has a maximum drain-source voltage rating of 25 V.
The dimensions of this unit are 5 mm in length, 4.1 mm in width, and 1.1 mm in height.
It can dissipate up to 179 W of power under maximum conditions.
The typical gate charge is 66 nano-Coulombs (nC).
The maximum gate-source voltage is rated at ±20 V.
It operates reliably within a temperature range from -55°C to 175°C.
The maximum drain-source resistance (Rds(on)) is 1.7 milliohms.
This model comes in a 4-pin SOT-669 surface mount package.
It features a Type N channel with enhancement mode operation.
It is suitable for applications requiring high current handling and efficient power switching in electronic circuits.
This MOSFET has a pin count of 4.
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