Nexperia Transistor, 1 A NPN, 100 V, 4-Pin SOT-223 PBSS8110Z,135

Nexperia PBSS8110Z,135 Transistor is a high-performance NPN bipolar junction transistor designed for low saturation voltage operation, handling collector currents up to 1 A and collector-emitter voltages up to 100 V. It is housed in a 4-pin SOT-223 compact surface mount package, making it suitable for space-constrained applications.

This transistor is optimized for switching and digital applications with reduced power losses and heat generation, improving overall device efficiency. Its robust electrical characteristics include a maximum power dissipation of 1.4 W and a high transition frequency of 100 MHz, supporting high-speed switching.

The device operates reliably over a wide temperature range from -65°C to 150°C, allowing use in challenging industrial environments. It features a minimum DC current gain of 80, ensuring effective current amplification, and a maximum collector-base voltage of 120 V for enhanced voltage handling.

Physically, the transistor's compact form factor with dimensions of 6.7 mm length, 7.3 mm width, and 1.65 mm height supports flexible mounting options in complex circuit designs. Its 4-pin configuration facilitates easy integration in various power and control electronic circuits.

This bipolar transistor is ideal for industrial, electronic manufacturing, and power management applications where efficient switching and amplification are critical. The product originates from China and carries the Nexperia quality assurance.

Low saturation voltage enhances efficiency in switching applications. Compact 4-pin SOT-223 package suitable for surface mounting. Maximum power dissipation rating of 1.4 W ensures reliability under load. Wide operating temperature range from -65°C to 150°C for diverse environments.

High transition frequency of 100 MHz suitable for high-speed switching. Collector-base voltage maximum of 120 V provides robust operation. Minimum DC current gain (hFE) of 80 for effective amplification. Emitter-base voltage maximum of 5 V to protect device integrity.

Compact dimensions: 6.7 mm length, 7.3 mm width, 1.65 mm height. Manufactured in China maintaining consistent quality standards. Explore the Electronics & Electricals category for more semiconductor devices and discrete components from Nexperia and other trusted manufacturers.

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