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STMicroelectronics SiC MOSFET Type N-Channel 15 A, 900 V Enhancement Mode, 3-Pin TO-220 STF16N90K5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16mm |
| Length | 10.4mm |
| Model | STF16N90K5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | SiC MOSFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 330mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 29.7nC |
| Maximum Gate Source Voltage Vgs | 25V |
Key Features
- High voltage capability of 900 V suitable for demanding power applications.
- Maximum continuous drain current of 15 A for efficient current handling.
- Low typical drain source resistance of 330 milliohms to minimize conduction losses.
- Rated for maximum power dissipation of 30 W ensuring reliable operation.
- Operates at a maximum temperature of 175°C for industrial environments.
- Enhanced gate charge of 29.7 nC ensuring fast switching speeds.
- Constructed in a TO-220 through-hole package with 3 pins for easy PCB integration.
- Robust design with minimum operating temperature of -55°C for various conditions.
Product Description
STMicroelectronics STF16N90K5 is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-performance power electronics applications. This device offers a maximum drain-source voltage of 900 V and continuous drain current of 15 A, making it suitable for power conversion, motor drives, and industrial systems.
The MOSFET features an enhancement mode channel with a typical drain-source resistance of 330 milliohms, enabling low conduction losses and improved efficiency. It is housed in a TO-220 package with through-hole mounting and 3 pins, facilitating robust mechanical connection and heat dissipation.
Key electrical specifications include a maximum power dissipation of 30 W and an operational temperature range from -55°C to 175°C, assuring reliable performance in challenging industrial environments. The typical gate charge at 25 V gate-source voltage is 29.7 nanocoulombs, allowing for swift switching transitions.
The product is 100% avalanche tested and includes zener protection to enhance device reliability under transient conditions. Its innovative proprietary vertical structure provides superior performance in switching and thermal characteristics.
High 900 V voltage rating for demanding power electronics. Capable of handling 15 A continuous current efficiently. Low 330 mΩ drain-source resistance minimizes power loss. Robust TO-220 package for easy mounting and effective cooling.
Wide operating temperature range from -55°C to 175°C for harsh environments. Fast switching enabled by low gate charge of 29.7 nC. Through-hole mount type for durable PCB connection. Three-pin configuration suitable for standard circuit designs.
Proprietary vertical structure enhances performance and reliability. 100% avalanche tested and zener-protected for safety and durability.
This SiC MOSFET is ideal for industrial, laboratory, power conversion, and manufacturing applications where high voltage and current reliability are critical. It supports energy-efficient designs needing robust performance at elevated temperatures.
Explore more semiconductor components and power MOSFETs on EnvMart for specialized industrial and electronics projects.
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Frequently Asked Questions
The maximum drain-source voltage is 900 V, making it suitable for high voltage applications.
It can handle a maximum continuous drain current of 15 A, which is efficient for power applications.
The typical drain-source resistance is 330 milliohms, which helps minimize conduction losses.
The maximum power dissipation is rated at 30 W, ensuring reliable operation in various applications.
It operates within a temperature range of -55°C to 175°C, suitable for harsh industrial environments.
This model is housed in a TO-220 package, designed for through-hole mounting with 3 pins.
The typical gate charge at a 25 V gate-source voltage is 29.7 nanocoulombs, enabling fast switching speeds.
Yes, it is designed for high-performance power electronics applications, including power conversion and motor drives.
The minimum operating temperature is -55°C, allowing it to function in extreme conditions.
This MOSFET has a pin count of 3, which is standard for its package type.
It features an N-channel enhancement mode, which is common for power MOSFETs.
It is 100% avalanche tested and includes zener protection to enhance reliability under transient conditions.
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