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onsemi Transistor 3 A NPN 100 V 4-Pin TP-FA Surface Mount Single Configuration 2SD1815S-TL-E

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 10.1mm
Length 6.7mm
Model 2SD1815S-TL-E
Width 2.5mm
Mount Type Surface
Series 2SD1815S
Maximum Operating Temperature 150°C
Package Type TP-FA
Pin Count 4
Maximum Collector Emitter Voltage Vceo 100V
Minimum DC Current Gain hFE 140
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 120V
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Maximum collector current of 3 amperes supports moderate power applications.
  • Collector-emitter voltage up to 100 volts allows operation under high voltage conditions.
  • Designed with single transistor configuration and NPN polarity for versatile circuit use.
  • Surface mount TP-FA 4-pin package ensures compact PCB integration and ease of assembly.
  • Minimum DC current gain (hFE) of 140 for adequate signal amplification.
  • Maximum power dissipation capability of 20 watts enhances thermal reliability.
  • Maximum operating temperature up to 150°C for durable industrial performance.
  • Maximum frequency of 1 MHz for switching and amplification tasks.

Product Description

onsemi 2SD1815S-TL-E transistor is a general purpose NPN discrete semiconductor designed by onsemi, offering a maximum DC collector current of 3A and a collector-emitter voltage rating of 100V. Its 4-pin TP-FA surface mount package ensures easy PCB integration for a variety of electronic applications.

This transistor features a minimum DC current gain of 140 and a power dissipation capacity of up to 20W, making it suitable for circuits requiring reliable switching and amplification performance. It operates at frequencies up to 1 MHz, ideal for moderate frequency analog and digital applications.

Industrial use cases include power regulation, signal amplification, and switching in consumer electronics, communication devices, and power supply modules. The device's maximum operating temperature of 150°C provides enhanced durability under industrial conditions.

Physical dimensions are 10.1 mm in height, 6.7 mm in length, and 2.5 mm in width, supporting compact design requirements. The package type TP-FA and surface mount technology facilitate streamlined manufacturing processes.

Maximum collector current of 3 amperes enables handling of significant load currents. High collector-emitter voltage rating supports robust voltage handling. Minimum DC current gain ensures efficient signal amplification.

Power dissipation rating supports reliable thermal management. Compact 4-pin TP-FA package for surface mount applications. Operates reliably up to 150°C ambient temperatures. Frequency capability up to 1 MHz suits switching and amplification.

Single NPN transistor configuration for versatile circuit use. Applications in industrial electronics, HVAC control, manufacturing automation, and testing equipment. Explore additional onsemi Bipolar Transistors and electronic components at EnvMart to find suitable devices for your industrial and commercial applications.

onsemi Transistor 3 A NPN 100 V 4-Pin TP-FA Surface Mount Single Configuration 2SD1815S-TL-E
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Frequently Asked Questions

The maximum collector current for the 2SD1815S-TL-E transistor is 3 amperes.

This model has a collector-emitter voltage rating of up to 100 volts.

It uses a 4-pin TP-FA surface mount package, facilitating compact PCB integration.

The minimum DC current gain (hFE) is 140, which allows for efficient signal amplification.

The maximum power dissipation capability of this transistor is 20 watts, enhancing thermal reliability.

This unit can operate at a maximum temperature of 150°C, suitable for industrial applications.

It can operate at frequencies up to 1 MHz, making it suitable for switching and amplification tasks.

The dimensions are 10.1 mm in height, 6.7 mm in length, and 2.5 mm in width.

It features a single transistor configuration and NPN polarity for versatile circuit use.

It is suitable for power regulation, signal amplification, and switching in various electronic devices.

The maximum emitter-base voltage (VEBO) is 6 volts.

The maximum collector-base voltage (VCBO) rating is 120 volts.

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