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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP30NF20 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STP30NF20 N-Channel STripFET MOSFET delivers high performance for industrial, automotive, and power electronics applications requiring reliable switching and efficient conduction. Featuring a maximum continuous drain current of 30 A and a drain-source voltage rating of 200 V, this device is suitable for various high-current switching tasks.
The enhancement mode N-Channel MOSFET is packaged in a 3-pin TO-220 housing designed for through-hole mounting, making it well-suited for assembly on printed circuit boards where robust mechanical and thermal properties are essential.
This MOSFET provides a low maximum drain-source resistance of 75 mΩ, which reduces conduction losses and increases efficiency in power conversion and control circuits. Its maximum power dissipation of 125 W supports demanding applications that generate significant heat during operation.
Fast switching is facilitated by a typical gate charge of 38 nC at the specified gate-source voltage, supporting high switching speeds in PWM and motor control systems. The robust gate-source voltage rating of 20 V protects the device from gate overvoltage conditions.
Operational temperature ranges from -55°C to 150°C, allowing deployment in environments with extreme thermal conditions, including automotive and industrial equipment. The compact dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width fit standard modular designs.
The device is an N-Channel enhancement mode MOSFET suitable for high-current applications. Maximum continuous drain current of 30 amperes supports demanding power switching needs. Drain-source voltage rated at 200 volts ensures reliability for various system voltages.
Low on-resistance (75 milliohms) helps minimize power loss. High power dissipation of 125 watts supports sustained operation. Fast switching enabled by 38 nanocoulomb typical gate charge. Wide operating temperature range: -55°C to 150°C.
TO-220 package type with through hole mount provides mechanical stability. Designed for industrial, automotive, and power electronics applications.
This MOSFET meets the needs of power switching in industrial machinery, automotive electronics, and commercial power management equipment. For more specialized semiconductor devices, explore the extensive catalog at EnvMart.
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