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STMicroelectronics STripFET Type N-Channel MOSFET 30 A 200 V Enhancement Mode 3-Pin TO-220 STP30NF20

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 15.75mm
Length 10.4mm
Model STP30NF20
Width 4.6mm
Mount Type Through Hole
Series STripFET
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 30A
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 75mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 38nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.5V

Key Features

  • The device is an N-Channel enhancement mode MOSFET suitable for high-current applications.
  • Maximum continuous drain current of 30 amperes supports demanding power switching needs.
  • Drain-source voltage is rated at 200 volts, ideal for industrial and automotive circuits.
  • Maximum drain-source resistance is 75 milliohms ensuring efficient conduction.
  • Rated for maximum power dissipation of 125 watts to handle heat in high-load operations.
  • Typical gate charge of 38 nanocoulombs allows fast switching performance.
  • Maximum gate-source voltage is 20 volts, ensuring gate-control safety.
  • Minimum operating temperature is -55°C for robust performance in cold environments.

Product Description

STMicroelectronics STP30NF20 N-Channel STripFET MOSFET delivers high performance for industrial, automotive, and power electronics applications requiring reliable switching and efficient conduction. Featuring a maximum continuous drain current of 30 A and a drain-source voltage rating of 200 V, this device is suitable for various high-current switching tasks.

The enhancement mode N-Channel MOSFET is packaged in a 3-pin TO-220 housing designed for through-hole mounting, making it well-suited for assembly on printed circuit boards where robust mechanical and thermal properties are essential.

This MOSFET provides a low maximum drain-source resistance of 75 mΩ, which reduces conduction losses and increases efficiency in power conversion and control circuits. Its maximum power dissipation of 125 W supports demanding applications that generate significant heat during operation.

Fast switching is facilitated by a typical gate charge of 38 nC at the specified gate-source voltage, supporting high switching speeds in PWM and motor control systems. The robust gate-source voltage rating of 20 V protects the device from gate overvoltage conditions.

Operational temperature ranges from -55°C to 150°C, allowing deployment in environments with extreme thermal conditions, including automotive and industrial equipment. The compact dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width fit standard modular designs.

The device is an N-Channel enhancement mode MOSFET suitable for high-current applications. Maximum continuous drain current of 30 amperes supports demanding power switching needs. Drain-source voltage rated at 200 volts ensures reliability for various system voltages.

Low on-resistance (75 milliohms) helps minimize power loss. High power dissipation of 125 watts supports sustained operation. Fast switching enabled by 38 nanocoulomb typical gate charge. Wide operating temperature range: -55°C to 150°C.

TO-220 package type with through hole mount provides mechanical stability. Designed for industrial, automotive, and power electronics applications.

This MOSFET meets the needs of power switching in industrial machinery, automotive electronics, and commercial power management equipment. For more specialized semiconductor devices, explore the extensive catalog at EnvMart.

STMicroelectronics STripFET Type N-Channel MOSFET 30 A 200 V Enhancement Mode 3-Pin TO-220 STP30NF20
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Frequently Asked Questions

The maximum continuous drain current for this model is 30 amperes, making it suitable for high-current applications.

The drain-source voltage rating is 200 volts, ensuring reliability for various system voltages.

This MOSFET has a maximum power dissipation rating of 125 watts, which supports sustained operation in demanding applications.

The typical gate charge is 38 nanocoulombs, which facilitates fast switching performance.

The dimensions of the TO-220 package are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.

The maximum gate-source voltage is rated at 20 volts, which helps protect the device from overvoltage conditions.

The minimum operating temperature is -55°C, allowing for robust performance in cold environments.

The maximum operating temperature for this MOSFET is 150°C, suitable for high-temperature applications.

The maximum drain-source resistance is 75 milliohms, which helps minimize conduction losses.

This model uses through-hole mounting, which is designed for mechanical stability on printed circuit boards.

This MOSFET is suitable for industrial, automotive, and power electronics applications requiring reliable switching and efficient conduction.

The channel type of this MOSFET is N-channel, which is suitable for enhancement mode operation.

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