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STMicroelectronics Type N-Channel MOSFET, 9 A, 950 V, Enhancement Mode, 3-Pin TO-220 STP6N95K5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP6N95K5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 950V |
| Maximum Drain Source Resistance Rds | 1.25Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Supports maximum continuous drain current of 9 A for robust power handling.
- Maximum drain-source voltage rating of 950 V enables operation in high-voltage circuits.
- Packaged in a 3-pin TO-220 format suitable for through-hole mounting.
- Utilizes MDmesh K5 technology reducing on-resistance and gate charge for optimized performance.
- Maximum power dissipation capability of 90 W for reliable thermal management.
- High maximum operating temperature of 150°C for durability in demanding environments.
- Low typical gate charge of 13 nC ensures fast switching speeds and increased efficiency.
- Comes with zener protection on gate for enhanced device longevity.
Product Description
STMicroelectronics STP6N95K5 is a high voltage, Type N-Channel MOSFET designed for efficient power switching applications. It features a maximum continuous drain current of 9 A and a maximum drain-source voltage of 950 V. The device is packaged in a 3-Pin TO-220 package allowing easy integration into through-hole PCB designs.
Engineered with proprietary MDmesh K5 technology, it offers ultra-low gate charge and reduced on-resistance, optimizing power density and electrical efficiency. The MOSFET supports enhancement mode operation, enabling it to be effectively used in high efficiency designs requiring fast switching and reliable thermal performance.
This MOSFET can dissipate up to 90 W of power and operate reliably in harsh industrial environments with temperatures ranging from -55°C to a maximum of 150°C. Its zener-protected gate further enhances operational reliability.
Commonly used in industrial power supplies, motor drives, and switching regulators, this device is ideal for applications demanding high voltage and current control with low power loss and high reliability.
Supports maximum continuous drain current of 9 A for robust power handling. Maximum drain-source voltage rating of 950 V enables operation in high-voltage circuits. Packaged in a 3-pin TO-220 format suitable for through-hole mounting.
Utilizes MDmesh K5 technology reducing on-resistance and gate charge for optimized performance. Maximum power dissipation capability of 90 W for reliable thermal management. High maximum operating temperature of 150°C for durability in demanding environments.
Low typical gate charge of 13 nC ensures fast switching speeds and increased efficiency. Comes with zener protection on gate for enhanced device longevity.
This MOSFET is a reliable choice for engineers and designers working in industrial, automotive, and power electronics sectors looking for high performance N-Channel power MOSFET solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 9 A.
It has a maximum drain-source voltage rating of 950 V, suitable for high-voltage applications.
This MOSFET is packaged in a 3-pin TO-220 format, which is suitable for through-hole mounting.
The maximum power dissipation capability is 90 W, providing reliable thermal management.
The typical gate charge is 13 nC, which ensures fast switching speeds and increased efficiency.
The MOSFET operates within a temperature range of -55°C to 150°C, making it suitable for demanding environments.
Yes, it comes with zener protection on the gate, enhancing the device's longevity.
It is a Type N-Channel MOSFET, designed for enhancement mode operation.
The maximum gate-source voltage for this model is 30 V.
The maximum drain-source resistance is 1.25 Ω, which contributes to its efficient performance.
This MOSFET is commonly used in industrial power supplies, motor drives, and switching regulators.
The dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
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