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STMicroelectronics Type N-Channel Power MOSFET 11 A 600 V Enhancement, 3-Pin TO-252 STD13N60DM2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.17mm |
| Length | 6.6mm |
| Model | STD13N60DM2 |
| Width | 6.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 360mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 12.5nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET provides low gate charge and fast recovery suitable for high-efficiency switching.
- It features an enhancement channel mode with a low RDS(on) of 360 milliohms.
- The device supports up to 110 W maximum power dissipation.
- It operates reliably across a wide temperature range from -55°C to 150°C.
- Compact dimensions of 6.6 mm length, 6.2 mm width, and 2.17 mm height facilitate surface mounting.
- Suitable for demanding power electronics, bridge topologies, and ZVS phase-shift converters.
- High dv/dt ruggedness and Zener-protected gate improve transient performance.
- Typical gate charge at Vgs is 12.5 nC ensuring efficient switching speeds.
Product Description
STMicroelectronics STD13N60DM2 is a high-voltage N-channel power MOSFET designed for efficient power switching applications. With a continuous drain current rating of 11 A and a drain-source voltage tolerance of 600 V, this enhancement-mode device enables robust operation in demanding environments.
Its TO-252 surface-mount package features a compact form factor of 6.6 mm length, 6.2 mm width, and 2.17 mm height, making it suitable for modern electronic assemblies requiring space efficiency. The device supports a maximum power dissipation of 110 W and operates reliably within a temperature range from -55°C to 150°C, supporting industrial and commercial applications.
This MOSFET is part of the MDmesh™ DM2 series, recognized for fast-recovery body diodes and extremely low gate charge, which enhances switching efficiency and reduces power losses. The low on-resistance (RDS(on)) of 360 milliohms minimizes conduction losses, while the device exhibits extremely high dv/dt ruggedness and features Zener diode protection on the gate to guard against voltage spikes.
Typical applications include high-efficiency converters, bridge topologies, and zero-voltage switching (ZVS) phase-shift converters in industrial power supplies and automotive-grade electronics. The reliable performance under high power and temperature conditions makes the STD13N60DM2 suitable for use in power management, power factor correction, and motor drive circuits.
This MOSFET provides low gate charge and fast recovery suitable for high-efficiency switching. It features an enhancement channel mode with a low RDS(on) of 360 milliohms. The device supports up to 110 W maximum power dissipation.
It operates reliably across a wide temperature range from -55°C to 150°C. Compact dimensions of 6.6 mm length, 6.2 mm width, and 2.17 mm height facilitate surface mounting. Suitable for demanding power electronics, bridge topologies, and ZVS phase-shift converters.
High dv/dt ruggedness and Zener-protected gate improve transient performance. Typical gate charge at Vgs is 12.5 nC ensuring efficient switching speeds. Forward voltage drop is 1.6 V, supporting efficient diode conduction.
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Frequently Asked Questions
The maximum continuous drain current for the STD13N60DM2 is 11 A.
It can handle a maximum drain-source voltage of 600 V.
The on-resistance (RDS(on)) is 360 milliohms.
It operates reliably within a temperature range from -55°C to 150°C.
The typical gate charge at Vgs is 12.5 nC.
The dimensions are 6.6 mm in length, 6.2 mm in width, and 2.17 mm in height.
The maximum power dissipation is 110 W.
This model supports surface mounting.
The forward voltage drop is 1.6 V.
The pin count for the STD13N60DM2 is 3.
It is suitable for high-efficiency converters, bridge topologies, and zero-voltage switching phase-shift converters.
It features high dv/dt ruggedness and Zener diode protection on the gate.
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