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STMicroelectronics PNP Power Transistor 8 A 80 V TO-252 Surface Mount 3-Pin MJD45H11T4

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.38mm
Length 6.7mm
Model MJD45H11T4
Width 10.1mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc 8A
Transistor Configuration Single

Key Features

  • Capable of maximum DC collector current of 8 amperes.
  • Supports maximum collector-emitter voltage of 80 volts for reliable operation.
  • Features a surface mount TO-252 package with 3 pins for easy PCB integration.
  • Maximum power dissipation rating of 20 watts enables high power applications.
  • Minimum DC current gain of 40 ensures efficient amplification performance.
  • Wide operating temperature range from 0°C up to 150°C for durability.
  • Designed for single configuration PNP bipolar transistor usage.
  • Maximum emitter-base voltage of 5 volts protects device from damage.

Product Description

STMicroelectronics MJD45H11T4 is a high-performance PNP bipolar power transistor suitable for demanding electrical and electronic applications. Featuring a robust TO-252 surface mount package with 3 pins, this transistor supports a maximum collector current of 8 A and a maximum collector-emitter voltage of 80 V, making it excellent for power switching and amplification tasks.

The device has a maximum power dissipation rating of 20 W, enabling it to handle significant loads without overheating under proper heat dissipation conditions. With a minimum DC current gain (hFE) of 40, it ensures sufficient amplification efficiency in various circuit designs.

This transistor is engineered to operate reliably across a wide temperature range, from 0°C to 150°C, making it suited for harsh industrial and commercial environments. Its compact dimensions (6.7 mm length, 10.1 mm width, and 2.38 mm height) allow for space-efficient PCB designs.

Applications include use in power supplies, motor control circuits, power amplifiers, and other industrial electronics where high current and voltage capabilities are required. The TO-252 surface mount form factor supports automated assembly and volume production.

When integrating this transistor, ensure adequate heat sinking and observe maximum voltage and current ratings for optimal performance and longevity. Capable of maximum DC collector current of 8 amperes. Supports maximum collector-emitter voltage of 80 volts for reliable operation.

Features a surface mount TO-252 package with 3 pins for easy PCB integration. Maximum power dissipation rating of 20 watts enables high power applications. Minimum DC current gain of 40 ensures efficient amplification performance.

Wide operating temperature range from 0°C up to 150°C for durability. Compact transistor dimensions: length 6.7 mm, width 10.1 mm, height 2.38 mm. Designed for single configuration PNP bipolar transistor usage. Maximum emitter-base voltage of 5 volts protects device from damage.

Ideal for industrial, electronic, and power control applications. Explore more Bipolar Transistors and semiconductor products from STMicroelectronics on EnvMart for your industrial and electronics projects.

STMicroelectronics PNP Power Transistor 8 A 80 V TO-252 Surface Mount 3-Pin MJD45H11T4
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Frequently Asked Questions

The maximum DC collector current for this model is 8 amperes.

It supports a maximum collector-emitter voltage of 80 volts.

This transistor comes in a TO-252 surface mount package with 3 pins.

The maximum power dissipation rating is 20 watts, allowing for high power applications.

It has a minimum DC current gain (hFE) of 40, ensuring efficient amplification performance.

The dimensions are 6.7 mm in length, 10.1 mm in width, and 2.38 mm in height.

It operates reliably within a wide temperature range from 0°C to 150°C.

The maximum emitter-base voltage for this model is 5 volts, which protects the device from damage.

This model is a PNP bipolar power transistor, designed for single configuration usage.

It is suitable for applications such as power supplies, motor control circuits, and power amplifiers.

This transistor has a pin count of 3, facilitating easy integration into PCB designs.

The country of origin for this model is India.

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