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Nexperia Digital Transistor NPN 100 mA 50 V 3-Pin UMT PDTC143ZU,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1mm
Length 2.2mm
Model PDTC143ZU,115
Width 1.35mm
Mount Type Surface
Series PDTC143Z
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 230MHz
Nexperia PDTC143TU,115 NPN Digital Transistor, 100 mA, 50 V, 3-Pin UMTBrand Nexperia
onsemi SMUN5212T1G NPN Digital Transistor, 100 mA, 50 V, 3-Pin SOT-323Brand onsemi

Key Features

  • The device integrates dual resistors, facilitating direct drive from digital sources.
  • Maximum power dissipation is 200 mW, suitable for low-power applications.
  • Features a gain (hFE) minimum of 100 ensuring reliable amplification.
  • Supports high-frequency operation up to 230 MHz transition frequency (ft).
  • The compact package size measures 2.2 mm length, 1.35 mm width, and 1 mm height.
  • Operating temperature range spans from -65°C to 150°C for broad environmental tolerance.
  • Surface mountable package type allows automated assembly and efficient PCB layouts.
  • Complies with RoHS environmental standards.

Product Description

Nexperia PDTC143ZU,115 is a digital NPN transistor designed for discrete semiconductor applications, rated for 100 mA maximum DC collector current and 50 V maximum collector-emitter voltage with a single transistor configuration in a 3-pin UMT surface mount package.

This dual resistor-equipped bipolar transistor allows direct interfacing with digital signals without additional external resistors, ideal for switching and amplification tasks in electronic circuits. Its enhanced current gain minimum of 100 and collector-base voltage support of 50 V enable efficient signal control with low power dissipation of 200 mW.

The device's small footprint, measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height, supports high-density PCB assembly using automated surface mounting techniques. It operates reliably within a wide temperature range from -65°C up to 150°C, suitable for industrial and consumer electronic applications requiring durability and thermal stability.

Nexperia's transistor also features a transition frequency of 230 MHz, facilitating use in moderate frequency amplification and switching circuits. It complies with RoHS regulations, ensuring environmental safety during manufacturing and use.

Manufactured in Malaysia, this product is commonly used in industrial, laboratory, and electronic manufacturing environments where high-performance, low-power digital transistors are required for switching and signal amplification.

The device integrates dual resistors, facilitating direct drive from digital sources. Maximum power dissipation is 200 mW, suitable for low-power applications. Features a gain (hFE) minimum of 100 ensuring reliable amplification.

Supports high-frequency operation up to 230 MHz transition frequency (ft). The compact package size measures 2.2 mm length, 1.35 mm width, and 1 mm height. Operating temperature range spans from -65°C to 150°C for broad environmental tolerance.

Surface mountable package type allows automated assembly and efficient PCB layouts. Complies with RoHS environmental standards. Designed and manufactured in Malaysia, ensuring quality and consistency. Explore more semiconductor and transistor products to meet your industrial design and manufacturing needs at EnvMart.

Explore more products in our Bipolar Transistors category.

Nexperia Digital Transistor NPN 100 mA 50 V 3-Pin UMT PDTC143ZU,115
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It has a maximum collector-emitter voltage rating of 50 V.

The transition frequency (ft) of this unit is 230 MHz, allowing for high-frequency operation.

This transistor features a minimum DC current gain (hFE) of 100, ensuring reliable amplification.

The package measures 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

It operates within a temperature range of -65°C to 150°C, suitable for various environments.

This model features a surface mountable package type, allowing for automated assembly.

Yes, it complies with RoHS environmental standards, ensuring safety during manufacturing and use.

The maximum power dissipation for this model is 200 mW, making it suitable for low-power applications.

This device is configured as a single NPN transistor.

It is suitable for switching and amplification tasks in electronic circuits, particularly in industrial and consumer applications.

This product is manufactured in Malaysia.

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