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Nexperia PNP Transistor, -2 A Collector Current, -20 V Collector Emitter Voltage, 3-Pin SOT-23 Package PBSS5320T,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model PBSS5320T,215
Width 2.5mm
Mount Type Surface
Series PBSS5320T
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -20V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 20V
Maximum Power Dissipation Pd 1.2W
Maximum DC Collector Current Idc -2A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Designed for low saturation voltage applications to improve efficiency.
  • Supports a maximum power dissipation of 1.2 W for robust operation.
  • Operates reliably across a temperature range of -65°C to 150°C.
  • High transition frequency of 100 MHz suitable for switching and digital circuits.
  • Compact 3 mm x 2.5 mm x 1.1 mm surface mount package for space-saving PCB layouts.
  • RoHS compliant ensuring environmental safety and regulatory adherence.
  • Single transistor configuration with a minimum DC current gain of 100.
  • Maximum emitter base voltage rating of 5 V for reliable transistor protection.

Product Description

The Nexperia PBSS5320T,215 is a low saturation voltage PNP bipolar junction transistor housed in a compact 3-pin SOT-23 surface mount package measuring 3 mm in length, 2.5 mm in width, and 1.1 mm in height. It is engineered to handle a maximum DC collector current of -2 A and withstand a maximum collector emitter voltage of -20 V, making it suitable for a variety of low-voltage switching applications.

This transistor is designed for applications requiring efficient switching with minimal heat generation, benefiting digital circuits and other space-constrained environments. The device features a maximum power dissipation of 1.2 W and a high transition frequency of 100 MHz, providing fast switching capabilities and improved overall circuit performance.

Operating temperature ranges from -65°C up to 150°C, ensuring reliability in both industrial and commercial environments. The minimum DC current gain (hFE) of 100 guarantees adequate amplification for linear and switching operations. The maximum collector base voltage (VCBO) is 20 V, and the maximum emitter base voltage (VEBO) is 5 V, offering protection against voltage spikes.

Designed and manufactured under RoHS compliance, this transistor fulfills environmental directives for lead-free and hazardous substance reduction. Its surface mount technology (SMT) package type is optimized for automated production lines, improving manufacturing throughput and reducing assembly costs.

This component excels in applications such as high-speed switching, digital signal processing, and small power amplification within industrial, telecommunications, and consumer electronics sectors. The low saturation voltage characteristic minimizes power losses, thereby enhancing efficiency and reducing thermal dissipation.

Low saturation voltage improves switching efficiency and reduces heat generation. Compact SOT-23 SMT package optimizes PCB space usage. Capable of handling -2 A collector current for robust performance. Wide operating temperature range suits industrial and commercial applications.

High transition frequency of 100 MHz supports fast switching circuits. RoHS compliant for environmentally responsible manufacturing. Consistent gain and voltage ratings ensure reliability and protection. Manufactured in China with stringent quality controls.

For engineers and technical professionals seeking reliable bipolar transistors for power-efficient switching and amplification solutions, the Nexperia PBSS5320T,215 provides performance and proven quality. Browse the full range of Bipolar Transistors and semiconductor devices on EnvMart for additional components to complement your designs.

Nexperia PNP Transistor, -2 A Collector Current, -20 V Collector Emitter Voltage, 3-Pin SOT-23 Package PBSS5320T,215
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Frequently Asked Questions

The maximum DC collector current for the PNP transistor is -2 A.

The maximum collector-emitter voltage rating is -20 V.

It has a high transition frequency of 100 MHz, suitable for fast switching applications.

The dimensions of the SOT-23 package are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The minimum DC current gain (hFE) is 100, ensuring adequate amplification for various applications.

The maximum power dissipation is 1.2 W, allowing for robust operation.

It operates reliably across a temperature range of -65°C to 150°C.

Yes, this transistor is RoHS compliant, ensuring adherence to environmental safety standards.

The maximum emitter-base voltage rating is 5 V, providing protection against voltage spikes.

This model uses surface mount technology (SMT) for optimized PCB layouts.

It is suitable for high-speed switching, digital signal processing, and small power amplification in various sectors.

The maximum collector-base voltage (VCBO) is 20 V, ensuring reliable operation under voltage conditions.

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