Nexperia Low Saturation Voltage PNP Bipolar Transistor, -2 A Collector Current, -30 V Collector Emitter PBSS5230T,215

Nexperia PBSS5230T,215 is a low saturation voltage PNP bipolar transistor housed in a compact 3-pin SOT-23 surface-mount package. It is designed for high-efficiency switching and digital applications where reduced collector-emitter saturation voltage and high collector current capacity are essential.

This transistor supports a maximum DC collector current of -2 A and a maximum collector-emitter voltage of -30 V, making it suitable for moderate power switching and amplification tasks. The device features a minimum DC current gain (hFE) of 100, providing effective signal amplification.

Operating over a broad temperature range from -65°C to 150°C, the PBSS5230T,215 transistor is robust for use in industrial, automotive, and commercial electronic systems. Its maximum power dissipation is rated at 480 mW, which contributes to low heat generation during operation, increasing device longevity.

The high transition frequency of 200 MHz enables high-speed switching applications, and the small form factor of the SOT-23 package (3 mm x 2.5 mm x 1.1 mm) is optimized for compact electronics designs.

This product complies with RoHS directives and meets the automotive standard AEC-Q101, ensuring quality and environmental safety standards are met. Its pin count of 3 supports typical configurations for bipolar transistors in discrete semiconductor applications.

Typical use cases include industrial machinery control, automotive electronic systems, digital logic switching, and other applications requiring reliable, efficient PNP transistor performance.

Maximum DC collector current of -2 A supports moderate current loads. Collector-emitter voltage rating of -30 V for robust operation. Compact SOT-23 surface mount package perfect for space-constrained designs. High current gain with minimum DC gain (hFE) of 100 ensures amplification efficiency.

Wide operating temperature range from -65°C to 150°C enables industrial use. Low power dissipation of 480 mW minimizes heat generation during operation. Automotive-grade AEC-Q101 qualification for reliability in harsh conditions.

Transition frequency up to 200 MHz suitable for high-speed switching. Pin count of 3 designed for standard bipolar transistor applications. Dimensions: 3 mm length, 2.5 mm width, 1.1 mm height for compact PCB footprints.

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