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Nexperia Low Saturation Voltage NPN Bipolar Transistor 3 A 50 V 4-Pin UPAK PBSS4350X,115

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Nexperia Low Saturation Voltage NPN Bipolar Transistor 3 A 50 V 4-Pin UPAK PBSS4350X,115

Name: Nexperia Low Saturation Voltage NPN Bipolar Transistor 3 A 50 V 4-Pin UPAK PBSS4350X,115
Brand: Nexperia
SKU: 99100
Price: 0.2 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.5mm
Length	4.6mm
Model	PBSS4350X,115
Width	4.25mm
Mount Type	Surface
Series	PBSS4350X
Maximum Operating Temperature	150°C
Package Type	UPAK
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	4
Maximum Collector Emitter Voltage Vceo	50V
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	50V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	1.6W
Maximum DC Collector Current Idc	3A
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
onsemi Transistor, 2 A NPN, 50 V dc, 3-Pin DPAKBrand	onsemi

Key Features

Features a maximum collector current of 3 A for high power handling.
Supports collector-emitter voltage up to 50 V ensuring robust operation.
Equipped with a 4-pin UPAK surface mount package for compact PCB design.
Ensures a minimum DC current gain (hFE) of 100 for reliable amplification.
Operates efficiently over a temperature range from -65°C to 150°C.
Capable of handling maximum power dissipation of 1.6 W with low saturation voltage.
High transition frequency of 100 MHz suitable for high-speed switching applications.
Designed with automotive-grade AEC-Q101 standard for reliable automotive use.

Product Description

Nexperia PBSS4350X,115 transistor is a low saturation voltage NPN bipolar transistor rated for a collector current of 3 A and maximum collector-emitter voltage of 50 V. This transistor features a 4-pin UPAK surface mount package which makes it ideal for space-constrained electronic applications. The transistor configuration is single and provides a minimum DC current gain (hFE) of 100, making it suited for amplification and switching functions in various circuits.

It is designed with a maximum power dissipation of 1.6 W, ensuring robust electrical performance with minimal heat generation. The device supports an operating temperature range between -65°C and 150°C, ideal for demanding industrial, automotive, and commercial electronic environments. Additionally, it complies with RoHS standards for environmental safety and the automotive AEC-Q101 standard ensuring reliability in automotive electronic systems.

With a high transition frequency of 100 MHz, this transistor excels in high-speed switching and amplification tasks. The compact package size (4.6 mm length, 4.25 mm width, and 1.5 mm height) facilitates easy integration on printed circuit boards, optimizing space efficiency in electronic products.

Maximum DC collector current of 3 A for high power capacity. Collector-emitter voltage rating of 50 V supports sturdy circuit operation. 4-pin UPAK package type for surface mount applications. Minimum DC current gain (hFE) of 100 ensures signal amplification.

Operating temperature range from -65°C to 150°C for broad environmental tolerance. Power dissipation of 1.6 W for reliable thermal performance. Compliance with RoHS environmental standards. Automotive certified with AEC-Q101 standard.

Dimensions optimized for compact circuit design.

This transistor is widely applicable in industrial, automotive, consumer electronics, and communication equipment, offering an efficient solution for switching and amplification needs. Explore more semiconductor and electronic components through EnvMart’s extensive catalog.

Explore more products in our Bipolar Transistors category.