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Nexperia Low Saturation Voltage PNP Bipolar Transistor PBSS5350X,115, 3 A, 50 V, 4-Pin UPAK

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Nexperia Low Saturation Voltage PNP Bipolar Transistor PBSS5350X,115, 3 A, 50 V, 4-Pin UPAK

Name: Nexperia Low Saturation Voltage PNP Bipolar Transistor PBSS5350X,115, 3 A, 50 V, 4-Pin UPAK
Brand: Nexperia
SKU: 99107
Price: 0.23 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.5mm
Length	4.6mm
Model	PBSS5350X,115
Width	2.5mm
Mount Type	Surface
Series	PBSS5350X
Maximum Operating Temperature	150°C
Package Type	UPAK
Minimum Operating Temperature	-65°C
Pin Count	4
Maximum Collector Emitter Voltage Vceo	-50V
Minimum DC Current Gain hFE	80
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	50V
Maximum Power Dissipation Pd	1.6W
Maximum DC Collector Current Idc	-3A
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
Diodes Inc Transistor, -500 mA PNP, -400 V, 3-Pin SOT-89Brand	DiodesZetex

Key Features

This transistor features very low collector-emitter saturation voltage which reduces power losses.
It comes in a compact 4-pin UPAK surface-mount package.
The device supports a maximum power dissipation of 1.6 W ensuring efficient thermal management.
Operation temperature ranges from -65°C to 150°C making it suitable for harsh environments.
Minimum DC current gain (hFE) is 80, suitable for a wide range of amplifier circuits.
The transistor has a transition frequency (ft) of 100 MHz for high frequency switching.
It offers high collector current capacity in a space-saving package.
Ideal for industrial, electronic, and power switching applications.

Product Description

Nexperia PBSS5350X,115 is a low saturation voltage PNP bipolar transistor designed for efficient switching and amplification in electronic circuits. Rated for a maximum DC collector current of -3 amperes and a maximum collector-emitter voltage of -50 volts, this transistor supports demanding power applications with minimal losses and heat generation.

Manufactured in a compact 4-pin UPAK surface-mount package measuring 4.6 mm in length, 2.5 mm in width and 1.5 mm in height, it occupies minimal PCB space, making it ideal for modern compact electronic designs.

With a maximum power dissipation of 1.6 watts and an operating temperature range from -65°C to 150°C, the transistor ensures robust performance under harsh thermal conditions. Its minimum DC current gain (hFE) of 80 and transition frequency of 100 MHz provide reliable amplification and fast switching capabilities.

This transistor features single transistor configuration with PNP polarity, supporting maximum collector base voltage of 50 V and emitter base voltage up to 5 V. It does not include automotive grade certification but is suitable for industrial, consumer electronics, and power management applications.

The low saturation voltage attribute of the PBSS5350X,115 transistor results in reduced power losses and heat generation, enhancing overall circuit efficiency. The surface mount technology (SMT) package facilitates automated assembly and high-volume manufacturing.

Very low collector-emitter saturation voltage reduces losses. Compact 4-pin UPAK surface mount package. Maximum DC collector current of -3 A. Maximum collector-emitter voltage -50 V. Maximum power dissipation of 1.6 W. Wide operating temperature range from -65°C to 150°C.

Minimum DC current gain of 80. Maximum transition frequency of 100 MHz. Manufactured in China.

This transistor is well-suited for use in electronic design, industrial equipment, power conversion, signal amplification, and other applications requiring efficient PNP Bipolar Transistors.

EnvMart offers this transistor as part of reliable semiconductor components for electronics manufacturing and repair.