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STMicroelectronics STripFET II Type N-Channel MOSFET, 60 V, 50 A, 30 W TO-220 STP55NF06FP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STP55NF06FP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 44.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
| N-isolated MOSFET,STP55NF06LFP 55A 60VBrand | STMicroelectronics |
Key Features
- Supports maximum continuous drain current of 50 A for high power switching.
- Features ultra-low on-resistance of 18 mΩ for efficient conduction.
- TO-220 package with through-hole mount and 3 pins.
- Typical gate charge of 44.5 nC at gate-source voltage of 4.5 V reduces switching losses.
- Maximum power dissipation rated at 30 W for robust thermal handling.
- Wide operating temperature range from -55°C up to 175°C.
- Maximum gate-source voltage tolerance of 20 V ensures reliable drive capability.
- Designed for industrial electronics, power management, and switching applications.
Product Description
STMicroelectronics STP55NF06FP is an N-Channel STripFET™ II type MOSFET designed for high-performance power switching and management tasks.
Featuring a maximum continuous drain current of 50 A and a drain-source voltage of 60 V, this device delivers robust current handling capabilities suitable for a variety of industrial and electronic applications.
The device is housed in a TO-220 package with a through-hole mount style and three pins, facilitating straightforward PCB integration and thermal management.
The low drain-source resistance of 18 mΩ reduces conduction losses, improving overall efficiency in switching circuits. Its typical gate charge of 44.5 nC at a gate voltage of 4.5 V allows for efficient gate drive and faster switching speeds.
Rated for a maximum power dissipation of 30 W, and with a wide operating temperature range from -55°C to 175°C, the STP55NF06FP is suitable for harsh environments and demanding applications.
Additionally, the device tolerates a maximum gate-source voltage of 20 V and has a forward voltage of approximately 1.5 V, ensuring robust electrical performance. Physical dimensions of the transistor are 10.4 mm in length, 4.6 mm in width, and 9.3 mm in height, making it compact for integration in space-constrained designs.
This MOSFET supports applications in industrial electronics, power management systems, motor control, and other electronics requiring efficient, reliable switching performance. Supports maximum continuous drain current of 50 A for high power switching.
Features ultra-low on-resistance of 18 mΩ for efficient conduction. TO-220 package with through-hole mount and 3 pins. Typical gate charge of 44.5 nC at gate-source voltage of 4.5 V reduces switching losses. Maximum power dissipation rated at 30 W for robust thermal handling.
Wide operating temperature range from -55°C up to 175°C. Maximum gate-source voltage tolerance of 20 V ensures reliable drive capability. Compact device dimensions: length 10.4 mm, width 4.6 mm, height 9.3 mm. Designed for industrial electronics, power management, and switching applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A, making it suitable for high power switching applications.
This MOSFET has a maximum drain-source voltage rating of 60 V, allowing it to handle significant voltage levels in various applications.
The device features an ultra-low on-resistance of 18 mΩ, which enhances conduction efficiency in switching circuits.
It comes in a TO-220 package with a through-hole mount style, facilitating easy integration onto PCBs.
The typical gate charge at a gate-source voltage of 4.5 V is 44.5 nC, which helps reduce switching losses.
The maximum power dissipation for this MOSFET is rated at 30 W, providing robust thermal handling capabilities.
This model operates within a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.
The maximum gate-source voltage tolerance is 20 V, ensuring reliable drive capability in various applications.
The dimensions of this model are 10.4 mm in length, 4.6 mm in width, and 9.3 mm in height, making it compact for integration.
It is designed for industrial electronics, power management systems, and motor control applications that require efficient switching performance.
The TO-220 package of this MOSFET has 3 pins, facilitating straightforward connections in circuit designs.
This model features an N-channel type, which is commonly used for high-performance power switching applications.
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