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International Rectifier STripFET Type N-Channel MOSFET 16 A 60 V Enhancement 3-Pin TO-220 STP16NF06
Specifications
| Country of Origin | Morocco |
|---|---|
| Brand | International Rectifier |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP16NF06 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET features an enhancement mode channel type for efficient switching.
- It supports a maximum continuous drain current of 16 amperes.
- The device operates at a maximum drain-source voltage of 60 volts.
- Designed with a TO-220 through-hole package with 3 pins for easy mounting.
- Maximum power dissipation is rated at 45 watts for reliable thermal performance.
- Gate charge is typically 10 nC at Vgs, supporting fast switching applications.
- Operating temperature range from -55°C to 175°C ensures durability in harsh environments.
- Maximum gate-source voltage is 20 V, with a forward voltage of 1.3 V.
Product Description
STMicroelectronics STP16NF06 is a robust N-Channel STripFET MOSFET designed for high-efficiency power switching in industrial and electronic applications. This device features an enhancement-mode N-channel with a continuous drain current rating of 16 amperes and a drain-source voltage of 60 volts, housed in a standard TO-220 3-pin package suitable for through-hole mounting.
Its low typical gate charge (10 nC) and forward voltage (1.3 V) contribute to reduced switching losses and efficient power handling, ideal for power management, motor control, and power conversion circuits. The maximum power dissipation of 45 W and wide operating temperature range (-55°C to 175°C) ensure reliable operation in demanding environments.
The compact TO-220 package (dimensions: 15.75 mm height, 4.6 mm width, and 10.4 mm length) supports easy integration into electronic assemblies while offering good thermal dissipation capabilities.
This STripFET MOSFET is tested for quality and performance, manufactured in Morocco, and does not have specific automotive or industrial certifications, making it suitable for general industrial and electronic applications.
This MOSFET features an enhancement mode channel type for efficient switching. Maximum continuous drain current: 16 A for high power handling. Maximum drain-source voltage: 60 V for robust voltage tolerance. TO-220 package with 3 pins supports standard through-hole PCB mounting.
Typical gate charge of 10 nC for fast switching performance. Power dissipation of 45 W for thermal reliability in power circuits. Operating temperature range from -55°C to 175°C adapts to multiple environments. Maximum gate-source voltage is 20 V to protect the MOSFET's gate.
Forward voltage rated at 1.3 V ensures consistent performance. Precise compact dimensions enable flexible PCB design.
This product is ideal for use in industrial power electronics, motor drives, power supplies, and other semiconductor applications requiring N-channel MOSFETs with moderate current and voltage ratings.
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Frequently Asked Questions
The maximum continuous drain current for this model is 16 amperes, allowing for high power handling in applications.
It can handle a maximum drain-source voltage of 60 volts, providing robust voltage tolerance for various applications.
This model is housed in a TO-220 package type, which supports through-hole mounting for easy integration into electronic assemblies.
The typical gate charge is 10 nC at Vgs, which contributes to its fast switching performance.
It has a maximum power dissipation rating of 45 watts, ensuring thermal reliability in power circuits.
The operating temperature range is from -55°C to 175°C, making it suitable for use in harsh environments.
The forward voltage is rated at 1.3 V, which ensures consistent performance during operation.
The TO-220 package has 3 pins, facilitating standard connections in electronic circuits.
The maximum gate-source voltage is 20 V, which helps protect the gate of the MOSFET.
This model features an enhancement mode N-channel, which is designed for efficient switching applications.
This product is manufactured in Morocco, ensuring compliance with quality standards in semiconductor production.
It is suitable for industrial power electronics, motor drives, and power supplies, among other semiconductor applications requiring N-channel MOSFETs.
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