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International Rectifier N-Channel Enhancement MOSFET 4.2 A 20 V 3-Pin SOT-23 IRLML2502TRPBF
Specifications
| Country of Origin | Thailand |
|---|---|
| Brand | International Rectifier |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML2502TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | IRLML2502 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 4.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.25W |
| Typical Gate Charge Qg @ Vgs | 8nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | 1.2V |
Key Features
- This surface mount MOSFET supports efficient switching in low voltage applications.
- The device features a maximum drain-source resistance of 80 milliohms.
- Operating temperature ranges from -55°C to 150°C, ensuring reliability in various environments.
- Typical gate charge of 8 nC allows fast switching performance.
- Maximum power dissipation is rated at 1.25 W for safe operation under load.
- The 3-pin SOT-23 package provides compact size with dimensions 3.04mm length, 1.4mm width, and 1.02mm height.
- No automotive standard or industry approvals are applicable to this MOSFET.
Product Description
International Rectifier presents the IRLML2502TRPBF, a type N-channel enhancement mode MOSFET designed for efficient performance in electronic circuits. Rated with a maximum continuous drain current of 4.2 A and a drain-source voltage of 20 V, this device provides reliable switching for power management applications.
Its surface mount SOT-23 package and 3-pin configuration afford compact integration on printed circuit boards, ideal for modern electronic designs. The component’s maximum drain-source resistance of 80 mΩ ensures minimum conduction losses, improving circuit efficiency.
The IRLML2502TRPBF MOSFET can operate within a wide temperature range from -55°C to 150°C, suitable for demanding industrial and consumer electronics environments.
With a typical gate charge of 8 nC at Vgs, the device supports rapid switching and enhanced performance in switching regulators and load switches. Its power dissipation rating of 1.25 W guarantees durability under continuous operation.
The dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height contribute to space-saving circuit boards. This MOSFET does not have automotive certifications or standards.
Primarily used in electronic components, power and connectors, this MOSFET excels in power management, switching, and control functions in industrial, consumer electronics, and telecommunications applications.
This MOSFET supports efficient low voltage switching in surface mount technology circuits. Compact SOT-23 package supports space-constrained PCB designs. Wide operating temperature range from -55°C to 150°C ensures reliability.
Low on-resistance reduces conduction losses and improves energy efficiency. Fast switching gate charge optimizes response for power management circuits. Rated for 4.2 A continuous drain current and 20 V voltage rating. Compact dimensions facilitate dense electronic board layouts.
Explore additional semiconductor components and MOSFETs in the Electronics & Electricals category at EnvMart for comprehensive power and switching solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.2 A.
This MOSFET has a maximum drain-source voltage rating of 20 V.
The typical gate charge at Vgs is 8 nC, which supports fast switching performance.
The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The maximum power dissipation is rated at 1.25 W.
It operates within a temperature range of -55°C to 150°C.
The maximum drain-source resistance is 80 mΩ, which helps reduce conduction losses.
This model uses a surface mount type for easy integration into circuit boards.
This MOSFET features a 3-pin configuration.
It is a Type N-channel enhancement mode MOSFET.
No, this MOSFET does not have automotive certifications or standards applicable to it.
The country of origin for this model is Thailand.
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