International Rectifier N-Channel Enhancement MOSFET 20 V, 4.2 A, 3-Pin SOT-23 IRLML2502TRPBF

International Rectifier IRLML2502TRPBF is a N-Channel Enhancement Mode MOSFET designed for efficient low voltage, low power switching applications. It supports a maximum continuous drain current (Id) of 4.2 amperes and a maximum drain-source voltage (Vds) of 20 volts. Packaged in a compact 3-pin SOT-23 surface mount package, it allows easy integration into modern PCB layouts.

The MOSFET’s low on-resistance of 80 milliohms reduces conduction losses, making it suitable for power management in portable and consumer electronics. Its power dissipation limit of 1.25 watts supports moderate heat dissipation without requiring advanced thermal management. With operating temperature tolerance ranging from -55°C up to 150°C, this device is reliable under harsh industrial, automotive, and consumer electronic environments.

Gate charge is optimized at 8 nanocoulombs which aids in minimizing switching losses ensuring high efficiency in DC-DC converters and switching regulators. The maximum gate-to-source voltage rating of 12 V protects the gate oxide during handling and operation. Additionally, the forward voltage drop of 1.2 V contributes to improved conduction performance.

Physical dimensions are minimized with length 3.04 mm, width 1.4 mm, and height 1.02 mm, making the IRLML2502TRPBF ideal for compact circuit board design and densely packed assemblies.

This MOSFET is widely applicable across industrial automation, consumer electronics, power management modules, battery-powered devices, and embedded electronic designs requiring robust and efficient switching components.

The device operates in enhancement mode with a low on-resistance of 80 mΩ. Surface mount package type ensures easy mounting on PCB boards. Maximum power dissipation rated at 1.25 W suitable for low power applications. Operates reliably between -55°C and 150°C, ensuring durability under various conditions.

Typical gate charge is low at 8 nC facilitating efficient switching. Maximum gate-source voltage is rated at 12 V for device protection. The MOSFET features a forward voltage drop of 1.2 V enhancing conduction efficiency.

Small dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height for space-constrained designs. Explore the Electronics & Electricals category for more semiconductor components like the IRLML2502TRPBF at EnvMart.