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STMicroelectronics Transistor 3 A NPN 80 V 3-Pin SOT-32 BD139

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 2.9mm
Length 27.05mm
Model BD139
Width 7.8mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type SOT-32
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 1.25W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
onsemi Transistor, 1.5 A NPN, 45 V, 3-Pin TO-225Brand onsemi

Key Features

  • Maximum collector current of 3 A ensuring reliable performance in switching and amplification.
  • Collector-emitter voltage rating of 80 V suitable for medium voltage applications.
  • Power dissipation of 1.25 W allowing safe thermal management in circuits.
  • Through-hole mount type for easy integration into PCB designs.
  • Minimum DC current gain (hFE) of 25 providing good amplification characteristics.
  • Compact dimensions with 27.05 mm length, 7.8 mm width, and 2.9 mm height.
  • Maximum operating temperature up to 150°C for durable operation in harsh environments.
  • Designed for general-purpose applications in power and signal amplification circuits.

Product Description

The STMicroelectronics BD139 is a general-purpose NPN bipolar junction transistor designed for switching and amplification applications. It features a 3-pin SOT-32 package with through-hole mounting suitable for various industrial and electronic uses requiring medium power and voltage capabilities.

With a maximum DC collector current rating of 3 A and collector-emitter voltage of 80 V, this transistor efficiently handles moderate power loads. The device supports a power dissipation rating of 1.25 W, enabling stable operation under normal circuit conditions.

BD139 offers a minimum DC current gain (hFE) of 25 and maximum emitter base voltage of 5 V, making it well-suited for amplification tasks. Its compact physical size of 27.05 mm length, 7.8 mm width, and 2.9 mm height allows flexible PCB integration while maintaining performance.

The maximum operating temperature of 150°C ensures reliable function in demanding environments common in industrial, laboratory, and electronic manufacturing applications. This transistor is ideal for use in power regulators, drivers, and inverter circuits among other typical electronic applications.

Maximum collector current of 3 A ensuring reliable performance in switching and amplification. Collector-emitter voltage rating of 80 V suitable for medium voltage applications. Power dissipation of 1.25 W allowing safe thermal management in circuits.

Through-hole mount type for easy integration into PCB designs. Minimum DC current gain (hFE) of 25 providing good amplification characteristics. Compact dimensions with 27.05 mm length, 7.8 mm width, and 2.9 mm height. Maximum operating temperature up to 150°C for durable operation in harsh environments.

Designed for general-purpose applications in power and signal amplification circuits. Manufactured in China maintaining standard quality compliance. 3-pin configuration compatible with standard transistor sockets and layouts.

This product belongs in the Bipolar Transistors category, used widely across electronic device manufacturing, industrial equipment, and lab instrumentation circuits. For more transistor options and semiconductor components, browse EnvMart's extensive electronics catalogue.

STMicroelectronics Transistor 3 A NPN 80 V 3-Pin SOT-32 BD139
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Frequently Asked Questions

The maximum collector current for this transistor is 3 A, ensuring reliable performance in both switching and amplification applications.

The collector-emitter voltage rating of the BD139 is 80 V, making it suitable for medium voltage applications.

This transistor has a power dissipation rating of 1.25 W, allowing for safe thermal management in circuits.

The dimensions of this model are 27.05 mm in length, 7.8 mm in width, and 2.9 mm in height.

The BD139 features a through-hole mount type, which facilitates easy integration into PCB designs.

The minimum DC current gain (hFE) for this transistor is 25, providing good amplification characteristics.

This model can operate at a maximum temperature of 150°C, ensuring reliable function in harsh environments.

The BD139 is packaged in a SOT-32 type, which is suitable for various applications requiring medium power capabilities.

The maximum emitter base voltage (VEBO) for this transistor is 5 V.

The BD139 is a single NPN transistor, designed for general-purpose applications in power and signal amplification circuits.

This transistor is designed for general-purpose applications, including power regulators, drivers, and inverter circuits.

The BD139 is manufactured in China, maintaining standard quality compliance.

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