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Nexperia Type P-Channel MOSFET, -5.3 A Drain Current, -20 V Drain-Source Voltage, 3-Pin SOT-23 Surface Mount PMV30XPEAR

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Nexperia Type P-Channel MOSFET, -5.3 A Drain Current, -20 V Drain-Source Voltage, 3-Pin SOT-23 Surface Mount PMV30XPEAR

Name: Nexperia Type P-Channel MOSFET, -5.3 A Drain Current, -20 V Drain-Source Voltage, 3-Pin SOT-23 Surface Mount PMV30XPEAR
Brand: Nexperia
SKU: 94996
Price: 0.26 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1mm
Length	3mm
Model	PMV30XPEAR
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	-5.3A
Maximum Drain Source Voltage Vds	-20V
Maximum Drain Source Resistance Rds	57mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	5.44W
Typical Gate Charge Qg @ Vgs	11nC
Maximum Gate Source Voltage Vgs	12V

Key Features

This device features trench MOSFET technology for very fast switching performance.
Maximum power dissipation is 5.44 W, supporting enhanced power handling capabilities.
The MOSFET operates within a temperature range from -55°C to 150°C, suitable for automotive applications.
The low on-resistance of 57 mΩ reduces conduction losses in power circuits.
Compliance with the AEC-Q101 automotive standard ensures reliability in automotive environments.
Compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height facilitate easy PCB mounting.
Typical gate charge at 12 V gate-source voltage is 11 nC, enabling fast switching speeds.
Electrostatic discharge protection rating exceeds 2 kV HBM, enhancing robust handling.

Product Description

The Nexperia PMV30XPEAR is a high-performance Type P-Channel enhancement mode MOSFET employing advanced trench technology in a small footprint 3-pin SOT-23 (TO-236AB) surface-mounted plastic package. It delivers a maximum continuous drain current of -5.3 A and a maximum drain-source voltage of -20 V, making it suitable for compact power switching applications.

This MOSFET offers very fast switching speeds with a typical gate charge of 11 nC at 12 V gate-source voltage, enabling efficient control in switching circuits. Its maximum power dissipation rating of 5.44 W and enhanced power dissipation capability (Ptot = 980 mW) provide reliable performance under demanding electrical loads.

Designed to operate over a wide temperature range from -55°C to 150°C, the device meets the stringent AEC-Q101 automotive standards, ensuring suitability for automotive electronics and related industrial environments.

The compact package size with dimensions of 3 mm length, 1.4 mm width, and 1 mm height allows for efficient use of PCB real estate. The device also incorporates robust electrostatic discharge protection exceeding 2 kV HBM, increasing durability during manufacturing and handling processes.

Typical applications for the PMV30XPEAR include relay drivers, high-speed line drivers, high-side load switches, and general switching circuits in industrial, automotive, and commercial sectors.

Very fast switching trench MOSFET technology. Enhanced power dissipation with a total power rating up to 980 mW. AEC-Q101 qualified for automotive reliability. Compact SOT-23 surface mount package with three pins. High electrostatic discharge protection greater than 2 kV.

Wide operating temperature range from -55°C to 150°C. Low on-resistance reduces conduction losses. Ideal for high-speed load switching applications. Explore a wide range of semiconductor components like MOSFETs on EnvMart for your industrial and electronic design needs.