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Nexperia Type N-Channel MOSFET 100 A 40 V Enhancement 4-Pin TO-220 PSMN2R8-40PS,127

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Nexperia Type N-Channel MOSFET 100 A 40 V Enhancement 4-Pin TO-220 PSMN2R8-40PS,127

Name: Nexperia Type N-Channel MOSFET 100 A 40 V Enhancement 4-Pin TO-220 PSMN2R8-40PS,127
Brand: Nexperia
SKU: 94985
Price: 2.86 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	4.7mm
Length	10.3mm
Model	PSMN2R8-40PS,127
Width	9.4mm
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	Type N
Maximum Continuous Drain Current Id	100A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	5.6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	211W
Typical Gate Charge Qg @ Vgs	71nC
Maximum Gate Source Voltage Vgs	20V

Key Features

This MOSFET features a maximum continuous drain current of 100 A.
It supports a maximum drain-source voltage of 40 V suitable for demanding power applications.
The device is housed in a durable TO-220 surface mount package with 4 pins for stable connectivity.
It offers a low maximum drain-source resistance of 5.6 milliohms ensuring minimal conduction losses.
The maximum gate-source voltage rating is 20 V, providing robust gate control.
Maximum power dissipation capability is 211 W for high power operation.
Designed to operate reliably from -55°C to 175°C for various industrial environments.
Typical gate charge at 20 V gate-source voltage is 71 nC, contributing to efficient switching.

Product Description

Nexperia PSMN2R8-40PS,127 Type N-Channel MOSFET provides a high-performance 100 A drain current and 40 V drain-source voltage capability in a compact TO-220 4-pin surface mount package.

Designed for power-critical and space-sensitive applications, this enhancement mode MOSFET achieves excellent switching performance with low conduction and switching losses. The robust construction allows it to withstand demanding industrial, communication, and domestic equipment stresses.

With a maximum power dissipation of 211 W and a continuous operating temperature range from -55°C up to 175°C, this device ensures reliable performance under extreme conditions. The low Rds(on) of 5.6 milliohms contributes to energy efficiency while the 20 V maximum gate-source voltage allows precise control.

The typical gate charge of 71 nC at Vgs provides quick switching suitable for DC-to-DC converters, load switching circuits, motor controllers, and server power supplies. The TO-220 package measures 10.3 mm in length, 9.4 mm width, and 4.7 mm height, offering easy integration into printed circuit boards requiring surface mounting.

Maximum continuous drain current of 100 A ensures high current capability. 40 V drain-source voltage for reliable voltage handling. Low on-resistance reduces conduction losses and increases efficiency. Robust, industrial-grade package qualified for 175 °C operation.

Enhancement mode channel ensures precise switching. Wide temperature range from -55 °C to 175 °C for industrial use. Suitable for DC-to-DC conversion and motor control applications. Compact TO-220 4-pin surface mount package.

High power dissipation rating of 211 W.

This MOSFET is a versatile component ideal for electronics designers working on power management in industrial, communications, and domestic sectors. Its balance of performance, thermal capability, and package convenience make it an essential device for modern power electronics.

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