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Nexperia Type N-Channel MOSFET, 2.8 A, 80 V Enhancement Mode, 8-Pin DFN Package PMP B215ENEAX PMPB215ENEAX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 0.65mm |
| Length | 2.1mm |
| Model | PMPB215ENEAX |
| Width | 2.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 2.8A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 445mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 15.6W |
| Typical Gate Charge Qg @ Vgs | 4.8nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Small and leadless ultra thin SMD plastic package | 2 x 2 x 0.65 mm |
Key Features
- This MOSFET features Trench MOSFET technology for improved efficiency and reliability.
- The compact DFN2020MD-6 surface-mount package measures 2.1 x 2.1 x 0.65 mm.
- It has a low maximum drain-source resistance of 445 mΩ for minimal power loss.
- The device supports a maximum gate-source voltage of 20 V and typical gate charge of 4.8 nC.
- Power dissipation rating is 15.6 W at standard operating conditions.
- Operational temperature range is from -55°C to 150°C.
- This MOSFET is AEC-Q101 automotive qualified for reliable automotive and industrial use.
- Exposed drain pad enhances thermal conduction for efficient heat dissipation.
Product Description
Nexperia PMPB215ENEAX is a Type N-channel enhancement mode MOSFET designed for medium power switching applications. It supports a maximum continuous drain current of 2.8 A and a drain-source voltage up to 80 V. Packaged in a compact, leadless DFN2020MD-6 surface-mounted device (SMD) measuring 2.1 mm by 2.1 mm with a height of 0.65 mm, this device is ideal for space-constrained electronics.
Utilizing Trench MOSFET technology, it offers low on-resistance with a maximum Rds(on) of 445 milliohms, resulting in reduced conduction losses and improved efficiency. The device supports a maximum gate-source voltage of 20 V with a typical gate charge of 4.8 nC, facilitating fast switching.
The PMPB215ENEAX features an exposed drain pad for enhanced thermal dissipation, allowing it to handle power dissipation of up to 15.6 W. Operating temperature range spans from -55°C to 150°C, suitable for demanding industrial, automotive, and power management applications.
This MOSFET is AEC-Q101 qualified, conforming to rigorous automotive standards to ensure durability and reliability in harsh environments. Its surface-mount DFN package supports automated PCB assembly, making it suitable for modern electronics manufacturing.
This device uses Trench MOSFET technology for high efficiency. The small 2 x 2 x 0.65 mm leadless DFN package reduces PCB space usage. Low Rds(on) of 445 mΩ minimizes power losses during operation. Supports gate-source voltages up to 20 V and fast switching gate charge of 4.8 nC.
Can dissipate up to 15.6 W power with enhanced thermal pad. Wide operating temperature range from -55°C to 150°C for reliability. AEC-Q101 compliant for automotive and industrial quality assurance.
Applications include automotive electronics, industrial power switching, DC-DC converters, and general-purpose load switching. Its compact size, combined with robust electrical characteristics, makes the PMPB215ENEAX a versatile component for compact, high-reliability designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.8 A.
It can handle a maximum drain-source voltage of 80 V.
The maximum drain-source resistance (Rds(on)) is 445 mΩ, which helps minimize power loss.
The operational temperature range spans from -55°C to 150°C.
The typical gate charge is 4.8 nC at a gate-source voltage of 20 V.
The DFN package measures 2.1 mm in length, 2.1 mm in width, and 0.65 mm in height.
Yes, it is AEC-Q101 qualified, making it suitable for automotive and industrial use.
This model supports surface mounting, which is ideal for automated PCB assembly.
The power dissipation rating is 15.6 W at standard operating conditions.
This is a Type N-channel enhancement mode MOSFET.
The package type is DFN, specifically the DFN2020MD-6 surface-mount package.
It is designed for medium power switching applications, including automotive electronics, industrial power switching, and DC-DC converters.
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