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Nexperia Resistor-Equipped Transistor 100 mA NPN + PNP 50 V 6-Pin SOT PUMD24,115

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Nexperia Resistor-Equipped Transistor 100 mA NPN + PNP 50 V 6-Pin SOT PUMD24,115

Name: Nexperia Resistor-Equipped Transistor 100 mA NPN + PNP 50 V 6-Pin SOT PUMD24,115
Brand: Nexperia
SKU: 94969
Price: 0.05 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	Malaysia
Brand	Nexperia
Height	0.95mm
Length	2.1mm
Model	PUMD24,115
Width	1.25mm
Mount Type	Surface
Series	PUMD24
Maximum Operating Temperature	150°C
Package Type	SOT
Minimum Operating Temperature	-65°C
Pin Count	6
Maximum Collector Emitter Voltage Vceo	50V
Minimum DC Current Gain hFE	80
Transistor Polarity	NPN + PNP
Maximum Emitter Base Voltage VEBO	10V
Maximum Collector Base Voltage VCBO	50V
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Dual

Key Features

This transistor incorporates built-in bias resistors with ±10% resistance ratio tolerance.
Offers maximum power dissipation of 300 mW and a minimum DC current gain of 80.
Operating temperature ranges from -65°C to 150°C ensuring robust performance.
Compact surface mount device with package dimensions of 2.1 mm length, 1.25 mm width, and 0.95 mm height.
Designed to reduce component count and simplify circuit design, suitable for various electronic and industrial applications.
Provides excellent space- and cost-saving solutions by combining transistors with resistors.
Ideal for use in electronic prototypes, power amplification, signal switching, and industrial electronics.

Product Description

The Nexperia PUMD24,115 resistor-equipped transistor combines a dual transistor configuration with integrated bias resistors, simplifying circuit designs and minimizing component count. Featuring NPN and PNP transistors, it supports a maximum DC collector current of 100 mA and maximum collector-emitter voltage of 50 V. This device is housed in a compact 6-pin SOT surface mount package, measuring 2.1 mm in length, 1.25 mm in width, and 0.95 mm in height.

Designed with robust electrical characteristics, the transistor delivers a maximum power dissipation of 300 mW and a minimum DC current gain (hFE) of 80, ensuring reliable amplification. Its operating temperature extends from -65°C up to 150°C, making it suitable for demanding environments.

This resistor-equipped transistor is ideal for use in industrial electronics, power management circuits, switching applications, and electronic component integration where space saving and simplified assembly are priorities. The integrated resistors reduce pick and place costs and aid in biasing, leading to efficient circuit operation.

Built-in bias resistors with ±10% tolerance improve circuit stability and design efficiency. Surface mount technology enables compact PCB layouts and automated assembly. Dual transistor design supports NPN and PNP transistor operations within one device.

Wide operating temperature allows application in harsh industrial and automotive environments. Low power dissipation aids in energy-efficient circuit design. Malaysia origin assures compliance with international quality standards.

Explore our wide range of Bipolar Transistors and semiconductor products at EnvMart, offering trusted quality for industrial and electronic component needs.