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ROHM Type N-Channel MOSFET, 3.7A, 1700V, Enhancement Mode, TO-3PFM Package SCT2H12NZ

Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 21mm
Length 16mm
Model SCT2H12NZ
Width 5mm
Mount Type Through Hole
Series SCT2H12NZ
Maximum Operating Temperature 175°C
Package Type TO-3PFM
Minimum Operating Temperature -55°C
Standards/Approvals Pb-free lead plating, RoHS
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 3.7A
Maximum Drain Source Voltage Vds 1700V
Maximum Drain Source Resistance Rds 1.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 35W
Typical Gate Charge Qg @ Vgs 21nC
Maximum Gate Source Voltage Vgs 22V
Forward Voltage Vf 4.3V

Key Features

  • Type N-channel MOSFET delivers high voltage and current performance.
  • Maximum continuous drain current of 3.7A ensures robust operation.
  • Drain-source voltage rated up to 1700V for demanding power applications.
  • 3-pin TO-3PFM package provides efficient mounting and heat dissipation.
  • Channel mode is enhancement for improved switching efficiency.
  • Forward voltage of 4.3V enables reliable activation.
  • Through-hole mount offers easy integration into electronic circuits.
  • Low drain-source resistance of 1.5Ω minimizes power loss.

Product Description

ROHM SCT2H12NZ is a high-performance Type N-Channel MOSFET designed for demanding industrial and power electronics applications. Featuring a maximum continuous drain current of 3.7A and a high drain-source voltage of 1700V, this device supports robust switching operations in environments requiring reliability and efficiency.

The SCT2H12NZ utilizes enhancement mode technology, resulting in improved switching speed and control. Its TO-3PFM package form factor ensures optimal heat dissipation while offering straightforward through-hole mounting for integration into PCBs and machinery. With a 1.5Ω maximum drain-source resistance, it provides efficient power handling and minimizes electrical losses.

This MOSFET supports forward voltage operation at 4.3V and has a typical gate charge of 21nC, enabling fast switching with minimal energy requirements. It is capable of functioning in a wide temperature range from -55°C to 175°C, making it suitable for industrial, laboratory, and harsh operating environments.

Type N-channel MOSFET delivers high voltage and current performance. Maximum continuous drain current of 3.7A ensures robust operation. Drain-source voltage rated up to 1700V for demanding power applications. 3-pin TO-3PFM package provides efficient mounting and heat dissipation.

Channel mode is enhancement for improved switching efficiency. Forward voltage of 4.3V enables reliable activation. Through-hole mount offers easy integration into electronic circuits. Low drain-source resistance of 1.5Ω minimizes power loss.

Operates within a wide temperature range from -55°C to 175°C. Pb-free lead plating and RoHS compliant for environmental safety.

Thanks to compliance with Pb-free and RoHS standards, the device meets international environmental requirements. Although not specifically rated for automotive standards, its features make it suitable for energy supply, industrial automation, and laboratory power supply systems.

Typical applications include industrial inverter circuits, power management modules, laboratory power supplies, and advanced electronics assemblies requiring high reliability and voltage handling. Its TO-3PFM package aids in automated production with efficient packaging and handling.

For more advanced semiconductor and MOSFET options from ROHM, browse the EnvMart electronics category for the latest in power and efficiency solutions.

ROHM Type N-Channel MOSFET, 3.7A, 1700V, Enhancement Mode, TO-3PFM Package  SCT2H12NZ
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Frequently Asked Questions

The maximum continuous drain current of this model is 3.7A, ensuring robust operation in various applications.

This MOSFET has a maximum drain-source voltage rating of 1700V, making it suitable for demanding power applications.

It utilizes a TO-3PFM package type, which provides efficient mounting and heat dissipation.

The operating temperature range for this unit is from -55°C to 175°C, accommodating a variety of environments.

The forward voltage required for activation is 4.3V, enabling reliable operation.

This model features enhancement mode technology, which improves switching efficiency and control.

The maximum drain-source resistance of this MOSFET is 1.5Ω, which helps minimize power loss during operation.

This MOSFET has a pin count of 3, suitable for through-hole mounting.

The typical gate charge at Vgs is 21nC, allowing for fast switching with minimal energy requirements.

Yes, it features Pb-free lead plating and is RoHS compliant, meeting international environmental requirements.

It is suitable for applications such as industrial inverter circuits, power management modules, and laboratory power supplies.

The dimensions of this MOSFET are 21mm in height, 16mm in length, and 5mm in width.

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