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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 21mm |
| Length | 16mm |
| Model | SCT2H12NZ |
| Width | 5mm |
| Mount Type | Through Hole |
| Series | SCT2H12NZ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-3PFM |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Pb-free lead plating, RoHS |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 3.7A |
| Maximum Drain Source Voltage Vds | 1700V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | 22V |
| Forward Voltage Vf | 4.3V |
ROHM SCT2H12NZ is a high-performance Type N-Channel MOSFET designed for demanding industrial and power electronics applications. Featuring a maximum continuous drain current of 3.7A and a high drain-source voltage of 1700V, this device supports robust switching operations in environments requiring reliability and efficiency.
The SCT2H12NZ utilizes enhancement mode technology, resulting in improved switching speed and control. Its TO-3PFM package form factor ensures optimal heat dissipation while offering straightforward through-hole mounting for integration into PCBs and machinery. With a 1.5Ω maximum drain-source resistance, it provides efficient power handling and minimizes electrical losses.
This MOSFET supports forward voltage operation at 4.3V and has a typical gate charge of 21nC, enabling fast switching with minimal energy requirements. It is capable of functioning in a wide temperature range from -55°C to 175°C, making it suitable for industrial, laboratory, and harsh operating environments.
Type N-channel MOSFET delivers high voltage and current performance. Maximum continuous drain current of 3.7A ensures robust operation. Drain-source voltage rated up to 1700V for demanding power applications. 3-pin TO-3PFM package provides efficient mounting and heat dissipation.
Channel mode is enhancement for improved switching efficiency. Forward voltage of 4.3V enables reliable activation. Through-hole mount offers easy integration into electronic circuits. Low drain-source resistance of 1.5Ω minimizes power loss.
Operates within a wide temperature range from -55°C to 175°C. Pb-free lead plating and RoHS compliant for environmental safety.
Thanks to compliance with Pb-free and RoHS standards, the device meets international environmental requirements. Although not specifically rated for automotive standards, its features make it suitable for energy supply, industrial automation, and laboratory power supply systems.
Typical applications include industrial inverter circuits, power management modules, laboratory power supplies, and advanced electronics assemblies requiring high reliability and voltage handling. Its TO-3PFM package aids in automated production with efficient packaging and handling.
For more advanced semiconductor and MOSFET options from ROHM, browse the EnvMart electronics category for the latest in power and efficiency solutions.
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