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ROHM QH8KB6TCR Type N-Channel MOSFET, 8A, 40V, Enhancement, TSMT-8, 8 Pin
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 2.9mm |
| Length | 3.1mm |
| Model | QH8KB6TCR |
| Width | 0.85mm |
| Mount Type | Surface |
| Series | QH8KB6 |
| Maximum Operating Temperature | 150°C |
| Package Type | TSMT-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 17.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 10.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Delivers a maximum continuous drain current of 8A and drain-source voltage up to 40V.
- Enhanced mode N-channel MOSFET suitable for demanding applications.
- TSMT-8 surface mount package ensures compact integration.
- Low on-resistance of 17.7mΩ for efficient power consumption.
- Operates reliably within a temperature range of -55°C to 150°C.
- Features a typical gate charge of 10.6nC for fast switching.
- Supports maximum power dissipation of 1.5W suitable for compact equipment.
- Designed for 24V input equipment and automation applications.
Product Description
ROHM QH8KB6TCR N-Channel MOSFET provides robust performance with an enhancement mode, delivering a maximum continuous drain current of 8A and a maximum drain-source voltage of 40V. Its compact TSMT-8 surface mount package ensures easy integration into PCBs, making it highly suitable for automated assembly lines and factory automation equipment.
This MOSFET offers a low drain-source on-resistance of 17.7mΩ, contributing to reduced power losses and improving device energy efficiency. The typical gate charge is 10.6nC, allowing fast and efficient switching ideal for motor control, industrial power switching, and 24V input systems. The device maintains performance over a wide temperature range, operating from -55°C to 150°C, making it reliable even in demanding industrial environments.
The QH8KB6TCR supports a maximum gate-source voltage of 20V and power dissipation up to 1.5W, with a forward voltage of 1.2V. Its 8-pin configuration ensures secure and stable surface mount installation. Applications include factory automation, base station motor drives, and power conversion systems that require compact, reliable, and efficient high-current switching elements.
Delivers a maximum continuous drain current of 8A and drain-source voltage up to 40V. Enhanced mode N-channel MOSFET suitable for demanding applications. TSMT-8 surface mount package ensures compact integration. Low on-resistance of 17.7mΩ for efficient power consumption.
Operates reliably within a temperature range of -55°C to 150°C. Features a typical gate charge of 10.6nC for fast switching. Supports maximum power dissipation of 1.5W suitable for compact equipment. Designed for 24V input equipment and automation applications.
This MOSFET is an excellent choice for engineers designing power switching circuits, motor controls, and energy-efficient automation devices across industrial, manufacturing, and commercial sectors. Browse EnvMart for the full range of ROHM MOSFETs and related semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 8A.
It supports a maximum drain-source voltage of 40V.
The on-resistance is rated at 17.7mΩ, which contributes to efficient power consumption.
The typical gate charge is 10.6nC, allowing for fast switching capabilities.
It operates reliably within a temperature range of -55°C to 150°C.
The package type is TSMT-8, which is suitable for surface mounting.
This MOSFET has a pin count of 8.
The maximum power dissipation is rated at 1.5W.
It is suitable for applications such as factory automation, motor control, and power conversion systems.
The forward voltage is specified at 1.2V.
The maximum gate-source voltage is 20V.
It features an N-channel type configuration, operating in enhancement mode.
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