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Infineon MOSFET Gate Driver 1EDC40I12AHXUMA1, 4A Output, 8-Pin DSO, 17V Supply

Category MOSFET Gate Driver Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.65mm
Length 7.6mm
Model 1EDC40I12AHXUMA1
Width 6.4mm
Mount Type Surface
Series 1EDC40I12AH
Output Current 4A
Maximum Operating Temperature 125°C
Package Type DSO
Minimum Operating Temperature -40°C
Number of outputs 2
Rise Time 10ns
Pin Count 8
Maximum Supply Voltage 17V
Minimum Supply Voltage 15V
Number of Drivers 2
Fall Time 9ns
Driver Type MOSFET

Key Features

  • 4A output current suitable for high-power MOSFET and IGBT applications.
  • 8-pin compact DSO package optimized for PCB surface mounting.
  • Wide supply voltage range from 15V to 17V.
  • Supports two outputs and two drivers for flexible design integration.
  • Fast switching with fall time 9ns and rise time 10ns.
  • Operates reliably from -40°C to 125°C for industrial environments.
  • Galvanic isolation driver ensures safety in high-voltage circuits.
  • Series 1EDC40I12AH provides rail-to-rail outputs for precise control.

Product Description

Infineon 1EDC40I12AHXUMA1 is a high-performance MOSFET gate driver engineered to deliver up to 4A output current, making it ideal for industrial control, power management, and drive applications. This compact driver utilizes a surface-mount 8-pin DSO package, offering robust electrical isolation and reliable operation in demanding environments.

The gate driver is suitable for 600V to 1200V IGBT, MOSFET, and SiC MOSFET devices, supporting peak output current up to 10A at separated output pins. With a supply voltage range of 15V to 17V, it enables stable operation across a variety of power management platforms. Input logic pins operate over 3V to 15V, providing compatibility with modern microcontroller interfaces.

Rapid switching performance is ensured with a fall time of 9ns and rise time of 10ns, optimizing energy efficiency and reducing switching losses. Galvanic isolation is achieved using coreless transformer technology, enhancing safety and noise immunity in high-voltage environments.

4A output current suitable for high-power MOSFET and IGBT applications. Compact 8-pin DSO package for space-constrained PCB mounting. Wide logic supply range enables seamless integration with various controllers. Operation temperature range -40°C to 125°C covers industrial and automotive applications.

Dual outputs and dual drivers offer flexible circuit design. Mounts efficiently with surface-mount technology. Rail-to-rail outputs support precise gate voltage control. Covers advanced safety requirements with galvanic isolation barrier.

This device is widely used in industrial automation, motor control, power conversion, photovoltaic inverter designs, and energy management systems. Its robust isolation and rapid switching performance fit demanding sectors such as renewable energy, manufacturing, automotive electronics, and laboratory equipment.

Explore more MOSFET Gate Drivers and power management ICs from Infineon in the EnvMart electronics category for reliable and innovative semiconductor solutions.

Infineon MOSFET Gate Driver 1EDC40I12AHXUMA1, 4A Output, 8-Pin DSO, 17V Supply
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Frequently Asked Questions

The output current of this model is 4A, making it suitable for high-power MOSFET and IGBT applications.

It operates with a supply voltage range of 15V to 17V, ensuring stable performance across various applications.

The rise time is 10ns and the fall time is 9ns, which contributes to its rapid switching performance.

It operates reliably within a temperature range of -40°C to 125°C, suitable for industrial environments.

This gate driver features two outputs and two drivers, allowing for flexible circuit design integration.

It comes in an 8-pin DSO package, optimized for surface mounting on PCBs.

The maximum supply voltage for this model is 17V.

The minimum operating temperature is -40°C, making it suitable for various environmental conditions.

It is widely used in industrial automation, motor control, power conversion, and photovoltaic inverter designs.

The device employs coreless transformer technology to achieve galvanic isolation, enhancing safety in high-voltage circuits.

The dimensions are 2.65mm in height, 7.6mm in length, and 6.4mm in width.

This model is part of the 1EDC40I12AH series, which includes various gate drivers designed for high-performance applications.

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